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EFP01 数据表(PDF) 41 Page - Silicon Laboratories |
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EFP01 数据表(HTML) 41 Page - Silicon Laboratories |
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41 / 158 page ![]() Parameter Symbol Test Condition Min Typ Max Unit Digital input low voltage VIL — — VIO*0.3 V Digital input high voltage VIH VIO*0.7 — — V Nominal input capacitor2 CIN VDDA / VDDB / VBOOST inputs, 25% tolerance 4.7 10 — µF Nominal output capacitor2 COUT VOA / VOB / VOC outputs, 25% tolerance 2.2 10 — µF VDDB internal measurement accuracy VDDBMEAS_ACC — -0.112 — LSB VDDA internal measurement accuracy VDDAMEAS_ACC — -0.02 — LSB Temperature measurement accuracy TEMPMEAS_ACC — +/- 10 — °C ADC measurement conver- sion time for one voltage and one temperature sample TMEAS — 18.6 — µs Power-on reset threshold, rising VPOR_THR_RIS — — 1.702 V Power-on reset threshold, falling VPOR_THR_FAL 1.58 — 1.68 V Under-voltage lockout threshold VUVLO_THR — 1.2 — V VDDB current when VDDB < UVLO threshold IUVLO VDDB = 1.0V — 24 — nA On resistance of DCDC A buck powertrain NMOS FET3 RDSA_BUCK_NM OS VDDB = 3.3V — 0.271 1.07 Ω On resistance of DCDC A buck powertrain PMOS FET3 RDSA_BUCK_PM OS VDDB = 3.3V — 0.150 0.676 Ω On resistance of DCDC A boost powertrain NMOS FET3 RDSA_BOOST_N MOS VDDB = VOA = 3.3V — 0.140 0.450 Ω On resistance of DCDC A boost powertrain PMOS FET3 RDSA_BOOST_P MOS VDDB = VOA = 3.3V — 0.172 0.645 Ω On resistance of DCDC B buck powertrain NMOS FET3 RDSB_BUCK_NM OS VDDB = 3.3V — 0.203 0.783 Ω On resistance of DCDC B buck powertrain PMOS FET3 RDSB_BUCK_PM OS VDDB = 3.3V — 0.294 1.26 Ω On resistance of LDO B in bypass mode3 RDSB_LDO_BYP VDDB = 3.0V — 0.778 1.32 Ω VDDB = 1.8V — 1.19 1.96 Ω On resistance of LDO C in bypass mode3 RDSC_LDO_BYP VDDB = 3.0V — 0.76 1.32 Ω VDDB = 1.8V — 1.19 1.96 Ω On resistance of VOA switch3 RDSVSW VDDB = 3.0V — 1.38 2.91 Ω VDDB = 1.8V — 2.2 4.14 Ω EFP01 Energy Friendly PMIC Family Data Sheet Electrical Specifications silabs.com | Building a more connected world. Rev. 1.3 | 41 |
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