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R5F104FCAFP 数据表(PDF) 46 Page - Renesas Technology Corp |
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R5F104FCAFP 数据表(HTML) 46 Page - Renesas Technology Corp |
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46 / 207 page ![]() RL78/G13 1. OUTLINE R01DS0131EJ0350 Rev.3.50 46 of 200 Jun 30, 2020 [40-pin, 44-pin, 48-pin, 52-pin, 64-pin products] Caution This outline describes the functions at the time when Peripheral I/O redirection register (PIOR) is set to 00H. (1/2) Item 40-pin 44-pin 48-pin 52-pin 64-pin Code flash memory (KB) 16 to 192 16 to 512 16 to 512 32 to 512 32 to 512 Data flash memory (KB) 4 to 8 – 4 to 8 – 4 to 8 – 4 to 8 – 4 to 8 – RAM (KB) 2 to 16Note1 2 to 32Note1 2 to 32Note1 2 to 32Note1 2 to 32Note1 Address space 1 MB Main system clock High-speed system clock X1 (crystal/ceramic) oscillation, external main system clock input (EXCLK) HS (High-speed main) mode: 1 to 20 MHz (VDD = 2.7 to 5.5 V), HS (High-speed main) mode: 1 to 16 MHz (VDD = 2.4 to 5.5 V), LS (Low-speed main) mode: 1 to 8 MHz (VDD = 1.8 to 5.5 V), LV (Low-voltage main) mode: 1 to 4 MHz (VDD = 1.6 to 5.5 V) High-speed on-chip oscillator HS (High-speed main) mode: 1 to 32 MHz (VDD = 2.7 to 5.5 V), HS (High-speed main) mode: 1 to 16 MHz (VDD = 2.4 to 5.5 V), LS (Low-speed main) mode: 1 to 8 MHz (VDD = 1.8 to 5.5 V), LV (Low-voltage main) mode: 1 to 4 MHz (VDD = 1.6 to 5.5 V) Subsystem clock XT1 (crystal) oscillation, external subsystem clock input (EXCLKS) 32.768 kHz Low-speed on-chip oscillator 15 kHz (TYP.) General-purpose registers (8-bit register × 8) × 4 banks Minimum instruction execution time 0.03125 µs (High-speed on-chip oscillator: fIH = 32 MHz operation) 0.05 µs (High-speed system clock: fMX = 20 MHz operation) 30.5 µs (Subsystem clock: fSUB = 32.768 kHz operation) Instruction set ● Data transfer (8/16 bits) ● Adder and subtractor/logical operation (8/16 bits) ● Multiplication (8 bits × 8 bits) ● Rotate, barrel shift, and bit manipulation (Set, reset, test, and Boolean operation), etc. I/O port Total 36 40 44 48 58 CMOS I/O 28 (N-ch O.D. I/O [VDD withstand voltage]: 10) 31 (N-ch O.D. I/O [VDD withstand voltage]: 10) 34 (N-ch O.D. I/O [VDD withstand voltage]: 11) 38 (N-ch O.D. I/O [VDD withstand voltage]: 13) 48 (N-ch O.D. I/O [VDD withstand voltage]: 15) CMOS input 5 5 5 5 5 CMOS output – – 1 1 1 N-ch O.D. I/O (withstand voltage: 6 V) 3 4 4 4 4 Timer 16-bit timer 8 channels Watchdog timer 1 channel Real-time clock (RTC) 1 channel 12-bit interval timer (IT) 1 channel Timer output 4 channels (PWM outputs: 3 Note2), 8 channels (PWM outputs: 7 Note2)Note3 5 channels (PWM outputs: 4 Note 2), 8 channels (PWM outputs: 7 Note 2) Note 3 8 channels (PWM outputs: 7 Note 2) RTC output 1 channel ● 1 Hz (subsystem clock: fSUB = 32.768 kHz) Notes 1. The flash library uses RAM in self-programming and rewriting of the data flash memory. The target products and start address of the RAM areas used by the flash library are shown below. R5F100xD, R5F101xD (x = E to G, J, L): Start address FF300H R5F100xE, R5F101xE (x = E to G, J, L): Start address FEF00H R5F100xJ, R5F101xJ (x = F, G, J, L): Start address FAF00H R5F100xL, R5F101xL (x = F, G, J, L): Start address F7F00H For the RAM areas used by the flash library, see Self RAM list of Flash Self-Programming Library for RL78 Family (R20UT2944). |
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