M68HC08 datasheet(58/288 Pages) FREESCALE

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FLASH Memory

Data Sheet

MC68HC908BD48 — Rev. 2.1

FLASH Memory

Freescale Semiconductor

4. Set the HVEN bit.

5. Wait for a time, tErase (min. 2ms)

6. Clear the ERASE bit.

7. Wait for a time, tnvh (min. 5µs)

8. Clear the HVEN bit.

9. After a time, trcv (min. 1µs), the memory can be accessed again in

read mode.

NOTE:

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order as shown, but other unrelated operations

may occur between the steps.

4.6 FLASH Mass Erase Operation

Use the following procedure to erase entire FLASH memory:

1. Set both the ERASE bit, and the MASS bit in the FLASH control

2. Write any data to any FLASH address within the FLASH memory

address range.

3. Wait for a time, tnvs (5µs).

4. Set the HVEN bit.

5. Wait for a time, tMErase (4ms).

6. Clear the ERASE bit.

7. Wait for a time, tnvhl (100µs).

8. Clear the HVEN bit.

9. After time, trcv (1µs), the memory can be accessed again in read

mode.

NOTE:

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order as shown, but other unrelated operations

may occur between the steps.

M68HC08 数据表(PDF) 58 Page - Freescale Semiconductor, Inc

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