M68HC08 datasheet(59/288 Pages) FREESCALE

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FLASH Memory

MC68HC908BD48 — Rev. 2.1

Data Sheet

Freescale Semiconductor

FLASH Memory

4.7 FLASH Program Operation

Programming of the FLASH memory is done on a row basis. A row

consists of 64 consecutive bytes starting from addresses $XX00,

$XX40, $XX80, and $XXC0. Use this step-by-step procedure to program

a row of FLASH memory (Figure 4-2 is a flowchart representation):

NOTE:

In order to avoid program disturbs, the row must be erased before any

byte on that row is programmed.

1. Set the PGM bit. This configures the memory for program

operation and enables the latching of address and data for

programming.

2. Write any data to any FLASH address within the row address

range desired.

3. Wait for a time, tnvs (min. 5µs).

4. Set the HVEN bit.

5. Wait for a time, tpgs (min. 10µs).

6. Write data to the FLASH address to be programmed.

7. Wait for time, tPROG (min. 20µs).

8. Repeat step 6 and 7 until all the bytes within the row are

programmed.

9. Clear the PGM bit.

10. Wait for time, tnvh (min. 5µs).

11. Clear the HVEN bit.

12. After time, trcv (min 1µs), the memory can be accessed in read

mode again.

This program sequence is repeated throughout the memory until all data

is programmed.

NOTE:

Programming and erasing of FLASH locations cannot be performed by

code being executed from the FLASH memory. While these operations

must be performed in the order shown, other unrelated operations may

occur between the steps. Do not exceed tPROG maximum. See 21.15

Memory Characteristics.

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