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MCP8021 数据表(PDF) 43 Page - Microchip Technology

部件名 MCP8021
功能描述  3-Phase Brushless DC (BLDC) Motor Gate Driver with Power Module, Sleep Mode, Op Amps
PDF  66 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP8021 数据表(HTML) 43 Page - Microchip Technology

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DS20006265D-page 43
MCP8021/2
5.2.2
BOOTSTRAP VOLTAGE
SUPPRESSION
The pins which handle the highest voltage during
motor operation are the bootstrap pins (VBx). The
bootstrap pin voltage is typically VBOOT (12V) higher
than the associated phase voltage. When the high-
side MOSFET is conducting, the phase pin voltage is
typically at VDD and the bootstrap pin voltage is
typically at VDD + 12V. When the phase MOSFETs
switch, current induced voltage transients occur on the
phase pins. These currents are caused by the
MOSFET body diode reverse recovery and MOSFET
turn-on/turn-off times. Those induced voltages cause
the bootstrap pin voltages to also increase. Depending
on the magnitude of the phase pin voltage, the
bootstrap pin voltage may exceed the safe operating
voltage of the device. The current induced transients
may be reduced by slowing down the turn-on and turn-
off times of the MOSFETs. The external MOSFETs
may be slowed down by adding a 10 to 100 ohm resis-
tor in series with the gate drive. A 1 nF to 10 nF
ceramic capacitor may be added that connects each
MOSFET gate and source terminal. The added capac-
itance slows down the switching times of the MOSFET
while allowing the gate resistance to remain small
enough to keep the gate clamped off. The added
capacitance also results in a lower slew rate of the
phase node and limits the shoot-through current
caused by the body diode reverse recovery.
The high-side MOSFETs may also be slowed down by
inserting a 10
 to 25 resistor between each boot-
strap pin and the associated bootstrap diode capacitor
junction. Another 25
 to 50 resistor is then added
between the gate drive and the MOSFET gate. This
results in a high-side turn-on resistance of 25
 plus
the series gate resistor. The high-side turn-off
resistance only consists of the series gate resistance
and allows for a faster shut-off time. Care must be
taken to make sure the voltage drop across the boot-
strap pin resistor does not cause an external MOSFET
undervoltage Fault.
When a system motor power supply voltage clamp is
not used, 33V or 36V transzorbs may be connected
from each bootstrap pin (VBx) to the ground. This will
ensure that the bootstrap voltage does not exceed the
absolute maximum voltage allowed on the pins. The
resistors connected between the bootstrap pins and
the bootstrap diode/capacitor junctions, mentioned in
the previous paragraph, may also be used in order to
limit the transzorb current and reduce the transzorb
package size.
5.2.3
FLOATING GATE SUPPRESSION
The gate drive pins may float when the supply voltage
is lost or an overvoltage situation shuts down the
driver. When an overvoltage condition exists, the
driver high-side and low-side outputs are tri-state.
Each external MOSFET that is connected to the gate
driver should have a gate-to-source resistor to bleed
off any charge that may accumulate due to the tri-
state. This will help prevent inadvertent turn-on of the
MOSFET.
Figure 5-3 shows the location of the overvoltage
transzorbs (or equivalent circuits), gate resistors,
bootstrap resistors and gate-to-source resistors.
5.2.4
MOSFET BODY DIODE REVERSE
RECOVERY SNUBBER
When motor current is flowing through the external
MOSFET body diodes and the complimentary
MOSFET of the phase pair turns on, the body diode
reverse recovery creates a momentary short circuit
until the reverse recovery time is complete. When the
body diode reverse recovery is complete, the current
path is opened, causing the phase node voltage to
slew rapidly towards ground or VDD levels. The rapid
slew rate may cause an inversion of the gate-to-
source voltage on the MOSFET that is turning on and
result in that MOSFET turning off.
The fast slew rate may also cause ringing on the
phase node and also the sense resistor if the turn-off
is too fast.
The first remedy for the low-side turn-off is to slow down
the MOSFET gate-to-source turn-off. This remedy the
RDSON of the low-side MOSFET to gradually increase
as the gate voltage drops and the low-side MOSFET
slowly turns off. The slow turn-off allows the phase volt-
age, generated by the motor current flowing through the
low-side MOSFET RDSON, to slowly rise towards the
positive motor supply level.
The same scenario is also valid for turning on the low-
side MOSFET when the high-side MOSFET has just
been turned off and current was flowing from the high-
side into the motor.



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