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MCP8021 数据表(PDF) 43 Page - Microchip Technology |
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MCP8021 数据表(HTML) 43 Page - Microchip Technology |
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43 / 66 page ![]() 2020-2024 Microchip Technology Inc. and its subsidiaries DS20006265D-page 43 MCP8021/2 5.2.2 BOOTSTRAP VOLTAGE SUPPRESSION The pins which handle the highest voltage during motor operation are the bootstrap pins (VBx). The bootstrap pin voltage is typically VBOOT (12V) higher than the associated phase voltage. When the high- side MOSFET is conducting, the phase pin voltage is typically at VDD and the bootstrap pin voltage is typically at VDD + 12V. When the phase MOSFETs switch, current induced voltage transients occur on the phase pins. These currents are caused by the MOSFET body diode reverse recovery and MOSFET turn-on/turn-off times. Those induced voltages cause the bootstrap pin voltages to also increase. Depending on the magnitude of the phase pin voltage, the bootstrap pin voltage may exceed the safe operating voltage of the device. The current induced transients may be reduced by slowing down the turn-on and turn- off times of the MOSFETs. The external MOSFETs may be slowed down by adding a 10 to 100 ohm resis- tor in series with the gate drive. A 1 nF to 10 nF ceramic capacitor may be added that connects each MOSFET gate and source terminal. The added capac- itance slows down the switching times of the MOSFET while allowing the gate resistance to remain small enough to keep the gate clamped off. The added capacitance also results in a lower slew rate of the phase node and limits the shoot-through current caused by the body diode reverse recovery. The high-side MOSFETs may also be slowed down by inserting a 10 to 25 resistor between each boot- strap pin and the associated bootstrap diode capacitor junction. Another 25 to 50 resistor is then added between the gate drive and the MOSFET gate. This results in a high-side turn-on resistance of 25 plus the series gate resistor. The high-side turn-off resistance only consists of the series gate resistance and allows for a faster shut-off time. Care must be taken to make sure the voltage drop across the boot- strap pin resistor does not cause an external MOSFET undervoltage Fault. When a system motor power supply voltage clamp is not used, 33V or 36V transzorbs may be connected from each bootstrap pin (VBx) to the ground. This will ensure that the bootstrap voltage does not exceed the absolute maximum voltage allowed on the pins. The resistors connected between the bootstrap pins and the bootstrap diode/capacitor junctions, mentioned in the previous paragraph, may also be used in order to limit the transzorb current and reduce the transzorb package size. 5.2.3 FLOATING GATE SUPPRESSION The gate drive pins may float when the supply voltage is lost or an overvoltage situation shuts down the driver. When an overvoltage condition exists, the driver high-side and low-side outputs are tri-state. Each external MOSFET that is connected to the gate driver should have a gate-to-source resistor to bleed off any charge that may accumulate due to the tri- state. This will help prevent inadvertent turn-on of the MOSFET. Figure 5-3 shows the location of the overvoltage transzorbs (or equivalent circuits), gate resistors, bootstrap resistors and gate-to-source resistors. 5.2.4 MOSFET BODY DIODE REVERSE RECOVERY SNUBBER When motor current is flowing through the external MOSFET body diodes and the complimentary MOSFET of the phase pair turns on, the body diode reverse recovery creates a momentary short circuit until the reverse recovery time is complete. When the body diode reverse recovery is complete, the current path is opened, causing the phase node voltage to slew rapidly towards ground or VDD levels. The rapid slew rate may cause an inversion of the gate-to- source voltage on the MOSFET that is turning on and result in that MOSFET turning off. The fast slew rate may also cause ringing on the phase node and also the sense resistor if the turn-off is too fast. The first remedy for the low-side turn-off is to slow down the MOSFET gate-to-source turn-off. This remedy the RDSON of the low-side MOSFET to gradually increase as the gate voltage drops and the low-side MOSFET slowly turns off. The slow turn-off allows the phase volt- age, generated by the motor current flowing through the low-side MOSFET RDSON, to slowly rise towards the positive motor supply level. The same scenario is also valid for turning on the low- side MOSFET when the high-side MOSFET has just been turned off and current was flowing from the high- side into the motor. |
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