ST10F271 datasheet(124/173 Pages) STMICROELECTRONICS

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Electrical characteristics

ST10F271

124/173

Electrical characteristics

24.1

Absolute maximum ratings

Note:

Stresses above those listed under “Absolute Maximum Ratings” may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect device reliability. During overload conditions (V

IN > VDD or VIN < VSS) the

voltage on pins with respect to ground (V

SS) must not exceed the values defined by the

Absolute Maximum Ratings.

During Power-on and Power-off transients (including Standby entering/exiting phases), the

relationships between voltages applied to the device and the main VDD shall be always

respected. In particular power-on and power-off of VAREF shall be coherent with VDD

transient, in order to avoid undesired current injection through the on-chip protection diodes.

24.2

Recommended operating conditions

Table 59.

Absolute maximum ratings

Symbol

Parameter

Values

Unit

VDD

Voltage on VDD pins with respect to ground (VSS)

-0.5 to +6.5

VSTBY

Voltage on VSTBY pin with respect to ground (VSS)

-0.5 to +6.5

VAREF

Voltage on VAREF pins with respect to ground (VSS)

-0.3 to VDD

VAGND

Voltage on VAGND pins with respect to ground (VSS)VSS

VIO

Voltage on any pin with respect to ground (VSS)

-0.5 to VDD + 0.5

IOV

Input current on any pin during overload condition

± 10

ITOV

Absolute sum of all input currents during overload condition

| 75 |

TST

Storage temperature

-65 to +150

°C

ESD

ESD Susceptibility (Human Body Model)

2000

Table 60.

Recommended operating conditions

Symbol

Parameter

Value

Unit

Min

Max

VDD

Operating supply voltage

4.5

5.5

VSTBY

Operationg stand-by supply voltage (1)

4.5

5.5

VAREF

Operating analog reference voltage (2)

Ambient temperature under bias

-40

+125

°C

Junction temperature under bias

-40

+150

°C

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