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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8/3021 数据表(PDF) 10 Page - Renesas Technology Corp |
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H8/3021 数据表(HTML) 10 Page - Renesas Technology Corp |
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10 / 712 page  Rev.2.00 Mar. 22, 2007 Page x of xxiv REJ09B0352-0200 Item Page Revision (See Manual for Details) 18. Electrical Characteristics 525 to 558 Preliminary deleted 18.2.5 Flash Memory Characteristics Table 18.15 Flash Memory Characteristics 548 Table amended Item Symbol Min Typ Max Unit Comments Erase Wait time after SWE bit setting* 1 t sswe 1 1 — μs Wait time after ESU bit setting* 1 t sesu 100 100 — μs Wait time after E bit setting* 1,*5 t se 10 10 100 ms Erase wait time A.1 Instruction List Table A.1 Instruction Set 1. Data transfer instructions 561 Table amended Mnemonic Operation MOV.B Rs, @(d:16, B Rs8 → @(d:16, ERd) ERd) MOV.B Rs, @(d:24, B Rs8 → @(d:24, ERd) ERd) MOV.B @ERs+, Rd B @ERs → Rd8 ERs32+1 → ERs32 2. Arithmetic instructions 565 Table amended EXTS.L ERd L (<bit 15> of ERd32) → (<bits 31 to 16> of ERd32) Mnemonic Operation 8. Block transfer instructions 573 Table amended Mnemonic Operation EEPMOV. W — if R4 ≠ 0 then repeat @R5 → @R6 R5+1 → R5 R6+1 → R6 R4–1 → R4 until R4=0 else next; |
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