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H8/3028F 数据表(PDF) 606 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 606 Page - Renesas Technology Corp |
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606 / 923 page ![]() Rev. 2.00, 09/03, page 576 of 890 18.2.2 Pin Configuration The flash memory is controlled by means of the pins shown in table 18.2. Table 18.2 Flash Memory Pins Pin Name Abbreviation I/O Function Reset RES Input Reset Flash write enable FWE Input Flash program/erase protection by hardware Mode 2 MD2 Input Sets H8/3028F-ZTAT operating mode Mode 1 MD1 Input Sets H8/3028F-ZTAT operating mode Mode 0 MD0 Input Sets H8/3028F-ZTAT operating mode Transmit data TxD1 Output Serial transmit data output Receive data RxD1 Input Serial receive data input 18.2.3 Register Configuration The registers used to control the on-chip flash memory when enabled are shown in table 18.3. Table 18.3 Flash Memory Registers Register Name Abbreviation R/W Initial Value Address* 1 Flash memory control register 1 FLMCR1 R/W H'00* 2 H'EE030 Flash memory control register 2 FLMCR2 R H'00 H'EE031 Erase block register 1 EBR1 R/W H'00 H'EE032 Erase block register 2 EBR2 R/W H'00 H'EE033 RAM control register RAMCR R/W H'F0 H'EE077 Notes: FLMCR1, FLMCR2, EBR1, EBR2, and RAMCR are 8-bit registers, and should be accessed by byte access. 1. Lower 20 bits of address in advanced mode. 2. When a high level is input to the FWE pin, the initial value is H'80. |
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