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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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H8/3028F 数据表(PDF) 702 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 702 Page - Renesas Technology Corp |
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702 / 923 page  Rev. 2.00, 09/03, page 672 of 890 21.2.6 Flash Memory Characteristics Table 21.19 shows the flash memory characteristics. Table 21.19 Flash Memory Characteristics Conditions: VCC = 3.0 V to 3.6 V, AVCC = 3.0 V to 3.6 V, VSS = AVSS = 0 V Ta = 0 to +75°C (Programming/erasing operating temperature range: regular specification) Ta = 0 to +85°C (Programming/erasing operating temperature range: wide-range specification) Item Symbol Min Typ Max Unit Notes Programming time* 1 *2 *4 tP — 10 200 ms/ 128 bytes Erase time* 1 *3 *5 tE — 100 1200 ms/block Reprogramming count NWEC — — 100 Times Programming Wait time after SWE bit setting* 1 tsswe 11 — µs Wait time after PSU bit setting* 1 tspsu 50 50 — µs Wait time after P bit setting* 1 *4 tsp30 28 30 32 µs Programming time wait tsp200 198 200 202 µs Programming time wait tsp10 8 10 12 µs Additional- programming time wait Wait time after P bit clear* 1 tcp 55 — µs Wait time after PSU bit clear* 1 tcpsu 55 — µs Wait time after PV bit setting* 1 tspv 44 — µs Wait time after H'FF dummy write* 1 tspvr 22 — µs Wait time after PV bit clear* 1 tcpv 22 — µs Wait time after SWE bit clear* 1 tcswe 100 100 — µs Maximum programming count* 1 *4 N — — 1000 Times Erase Wait time after SWE bit setting* 1 tsswe 11 — µs Wait time after ESU bit setting* 1 tsesu 100 100 — µs Wait time after E bit setting* 1 *5 tse 10 10 100 ms Erase time wait Wait time after E bit clear* 1 tce 10 10 — µs Wait time after ESU bit clear* 1 tcesu 10 10 — µs Wait time after EV bit setting* 1 tsev 20 20 — µs Wait time after H'FF dummy write* 1 tsevr 22 — µs Wait time after EV bit clear* 1 tcev 44 — µs Wait time after SWE bit clear* 1 tcswe 100 100 — µs Maximum erase count* 1 *5 N 12 — 120 Times |
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