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H8/3028F 数据表(PDF) 798 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 798 Page - Renesas Technology Corp |
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798 / 923 page ![]() Rev. 2.00, 09/03, page 768 of 890 DRCRA—DRAM Control Register A H'EE026 DRAM interface DRAM area select 00 1 0 1 0 1 0 1 0 1 0 1 1 DRAS2 DRAS1 DRAS0 Area 5 Normal Normal Normal Normal Normal DRAM space ( CS 5) Area 4 Normal Normal Normal Normal DRAM space ( CS 4) DRAM space ( CS 4) Area 3 Normal Normal DRAM space ( CS 3) DRAM space ( CS 3) DRAM space ( CS 3) Area 2 Normal DRAM space ( CS 2) DRAM space ( CS 2) DRAM space ( CS 2) DRAM space ( CS 2) DRAM space( CS 2)* DRAM space( CS 4)* DRAM space( CS 2)* DRAM space( CS 2)* Note: * A single CSn pin serves as a common RAS output pin for a number of areas. Unused CSn pins can be used as input/output ports. 7 DRAS2 0 R/W 6 DRAS1 0 R/W 5 DRAS0 0 R/W 4 — 1 — 3 BE 0 R/W 2 RDM 0 R/W 1 SRFMD 0 R/W 0 RFSHE 0 R/W Bit Initial value Read/Write Refresh pin enable 0 1 Self-refresh mode RAS down mode 0 1 0 1 Burst access enable 0 1 RFSH pin refresh signal output is disabled RFSH pin refresh signal output is enabled DRAM self-refreshing is disabled in software standby mode DRAM self-refreshing is enabled in software standby mode DRAM interface: RAS up mode selected DRAM interface: RAS down mode selected Burst disabled (always full access) DRAM space access performed in fast page mode |
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