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KM416RD8ACD-RK80 数据表(PDF) 48 Page - Samsung semiconductor

部件名 KM416RD8ACD-RK80
功能描述  128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
PDF  64 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM416RD8ACD-RK80 数据表(HTML) 48 Page - Samsung semiconductor

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Page 45
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
tDR1, tDF1
SIO0, SIO1 input rise and fall times
-
5.0
ns
Figure 56
tDR2, tDF2
CMD, SCK input rise and fall times
-
2.0
ns
Figure 56
tCYCLE1
SCK cycle time - Serial control register transactions
1000
-
ns
Figure 56
SCK cycle time - Power transitions
10
-
ns
Figure 56
tCH1, tCL1
SCK high and low times
4.25
-
ns
Figure 56
tS1
CMD setup time to SCK rising or falling edgee
1
-
ns
Figure 56
tH1
CMD hold time to SCK rising or falling edgee
1
-
ns
Figure 56
tS2
SIO0 setup time to SCK falling edge
40
-
ns
Figure 56
tH2
SIO0 hold time to SCK falling edge
40
-
ns
Figure 56
tS3
PDEV setup time on DQA5..0 to SCK rising edge.
0
-
ns
Figure 48,
Figure 57
tH3
PDEV hold time on DQA5..0 to SCK rising edge.
5.5
-
ns
tS4
ROW2..0, COL4..0 setup time for quiet window
-1
-
tCYCLE
Figure 48
tH4
ROW2..0, COL4..0 hold time for quiet windowf
5
-
tCYCLE
Figure 48
vIL,CMOS
CMOS input low voltage - over/undershoot voltage duration is less
than or equal to 5ns
- 0.7
VCMOS/2
- 0.6
V
vIH,CMOS
CMOS input high voltage - over/undershoot voltage duration is less
than or equal to 5ns
VCMOS/2
+ 0.6
VCMOS +
0.7
V
tNPQ
Quiet on ROW/COL bits during NAP/PDN entry
4
-
tCYCLE
Figure 47
tREADTOCC
Offset between read data and CC packets (same device)
12
-
tCYCLE
Figure 51
tCCSAMTOREAD
Offset between CC packet and read data (same device)
8
-
tCYCLE
Figure 51
tCE
CTM/CFM stable before NAP/PDN exit
2
-
tCYCLE
Figure 48
tCD
CTM/CFM stable after NAP/PDN entry
100
-
tCYCLE
Figure 47
tFRM
ROW packet to COL packet ATTN framing delay
7
-
tCYCLE
Figure 46
tNLIMIT
Maximum time in NAP mode
10.0
µs
Figure 45
tREF
Refresh interval
32
ms
Figure 50
tCCTRL
Current control interval
34 tCYCLE
100ms
ms/tCYCLE
Figure 51
tTEMP
Temperature control interval
100
ms
Figure 52
tTCEN
TCE command to TCAL command
150
-
tCYCLE
Figure 52
tTCAL
TCAL command to quiet window
2
2
tCYCLE
Figure 52
tTCQUIET
Quiet window (no read data)
140
-
tCYCLE
Figure 52
tPAUSE
RDRAM delay (no RSL operations allowed)
200.0
µs
page 28
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b. This parameter also applies to a -800 or -711 part when operated with tCYCLE=3.33ns.
c. This parameter also applies to a -800 part when operated with tCYCLE=2.81ns.
d. tS,MIN and tH,MIN for other tCYCLE values can be interpolated between or extrapolated from the timings at the 3 specified tCYCLE values.
e. With VIL,CMOS=0.5VCMOS-0.6V and VIH,CMOS=0.5VCMOS+0.6V
f. Effective hold becomes tH4= tH4+[PDNXA64tSCYCLE+tPDNXB,MAX]-[PDNX256tSCYCLE]
if [PDNX256tSCYCLE] < [PDNXA64tSCYCLE+tPDNXB,MAX]. See Figure 48.
Table 19: Timing Conditions
Symbol
Parameter
Min
Max
Unit
Figure(s)



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