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KM416RD8ACD-RK80 数据表(PDF) 37 Page - Samsung semiconductor

部件名 KM416RD8ACD-RK80
功能描述  128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
PDF  64 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM416RD8ACD-RK80 数据表(HTML) 37 Page - Samsung semiconductor

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Page 34
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM™
Rev. 1.01 Oct. 1999
Figure 32: REFB Register
Figure 33: CCA Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
0
0
0
REFB4..REFB0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Bank register.
REFB4..REFB0 is the bank that will be refreshed next
during self-refresh. REFB4..0 is incremented after each
self-refresh activate and precharge operation pair.
Control Register: REFB
Address: 04116
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
CCA6..CCA0
ASYMA
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCA6..CCA0 - Current Control A. Controls the IOL
output current for the DQA8..DQA0 pins.
ASYMA0 control the asymmetry of the VOL/VOH
voltage swing about the VREF reference voltage for the
DQA8..0 pins.
Control Register: CCA
Address: 04316
Figure 34: REFR Register
Figure 35: CCB Register
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
REFR8..REFR0
Read/write register.
Reset value is zero (from SETR/CLRR).
Refresh Row register.
REFR8..REFR0 is the row that will be refreshed next
by the REFA command or by self-refresh. REFR8..0 is
incremented when BR4..0=11111 for the REFA
command. REFR8..0 is incremented when
REFB4..0=11111 for self-refresh.
Control Register: REFR
Address: 04216
15 14 13 12 11 10
9
8
7
6
5
4
3
2
1
0
0
0
0
0
0
0
0
0
CCB6.CCB0
ASYMB
0
Read/write register.
Reset value is zero (SETR/CLRR or SIO Reset).
CCB6..CCB0 - Current Control B. Controls the IOL
output current for the DQB8..DQB0 pins.
ASYMB0 control the asymmetry of the VOL/VOH
voltage swing about the VREF reference voltage for the
DQB8..0 pins.
Control Register: CCB
Address: 04416



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