| 数据搜索系统,热门电子元器件搜索 |
|
KM416RD8ACD-RK80 数据表(PDF) 31 Page - Samsung semiconductor |
|
|
|||||||||||||||||||||||||||||
KM416RD8ACD-RK80 数据表(HTML) 31 Page - Samsung semiconductor |
|
31 / 64 page ![]() Page 28 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 Initialization Initialization refers to the process that a controller must go through after power is applied to the system or the system is reset. The controller prepares the RDRAM sub-system for normal Channel operation by using a sequence of control register transactions on the serial CMOS pins.The following steps outline the sequence seen by the various memory subsystem components (including the RDRAM compo- nents) during initialization. This sequence is available in the form of reference code. 1.0 Start Clocks - This step calculates the proper clock frequencies for PClk (controller logic), SynClk (RAC block), RefClk (DRCG component), CTM (RDRAM component), and SCK ( SIO block). 2.0 RAC Initialization - This step causes the INIT block to generate a sequence of pulses which resets the RAC, performs RAC maintainance operations, and measures timing intervals in order to ensure clock stability. 3.0 RDRAM Initialization - This stage performs most of the steps needed to initialize the RDRAMs. The rest are performed in stages 5.0, 6.0, and 7.0. All of the Steps in 3.0 are carried out through the SIO block interface. ο 3.1/3.2 SIO Reset - This reset operation is performed before any SIO control register read or write transactions. It clears six registers (TEST34, CCA, CCB, SKIP, TEST78, and TEST79) and places the INIT register into a special state (all bits cleared except SRP and SDEVID fields are set to ones). ο 3.3 Write TEST77 Register - The TEST77 register must be explicitly written with zeros before any other registers are read or written. ο 3.4 Write TCYCLE Register - The TCYCLE register is written with the cycle time tCYCLE of the CTM clock (for Channel and RDRAMs) in units of 64ps. The tCYCLE value is determined in stage 1.0. ο 3.5 Write SDEVID Register - The SDEVID (serial device identification) register of each RDRAM is written with a unique address value so that directed SIO read and write transactions can be performed. This address value increases from 0 to 31 according to the distance an RDRAM is from the ASIC component on the SIO bus ( the closest RDRAM is address 0). ο 3.6 Write DEVID Register - The DEVID (device iden- tification) register of each RDRAM is written with a unique address value so that directed memory read and write transactions can be performed. This address value increases from 0 to 31. The DEVID value is not neces- sarily the same as the SDEVID value. RDRAMs are sorted into regions of the same core configuration (number of bank, row, and column address bits and core type). ο 3.7 Write PDNX, PDNXA Registers - The PDNX and PDNXA registers are written with values that are used to measure the timing intervals connected with an exit from the PDN (powerdown) power state. ο 3.8 Write NAPX Register - The NAPX register is written with values that are used to measure the timing intervals connected with an exit from the NAP power state. ο 3.9 Write TPARM Register - The TPARM register is written with values which determine the time interval between a COL packet with a memory read command and the Q packet with the read data on the Channel. The values written set each RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0. ο 3.10 Write TCDLY1 Register - The TCDLY1 register is written with values which determine the time interval between a COL packet with a memory read command and the Q packet with the read data on the Channel. The values written set each RDRAM to the minimum value permitted for the system. This will be adjusted later in stage 6.0. ο 3.11 Write TFRM Register - The TFRM register is written with a value that is related to the tRCD parameter for the system. The tRCD parameter is the time interval between a ROW packet with an activate command and the COL packet with a read or write command. ο 3.12 SETR/CLRR - Each RDRAM is given a SETR command and a CLRR command through the SIO block. This sequence performs a second reset operation on the RDRAMs. Figure 26: SIO Reset Sequence SCK CMD SIO0 T16 0000000000000000 00000000...00000000 0000000000000000 1100 SIO1 The packet is repeated from SIO0 to SIO1 1 1 1 1 0 0 0 0 0000 T0 |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |