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KM416RD8ACD-RK80 数据表(PDF) 23 Page - Samsung semiconductor

部件名 KM416RD8ACD-RK80
功能描述  128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
PDF  64 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
标志 SAMSUNG - Samsung semiconductor

KM416RD8ACD-RK80 数据表(HTML) 23 Page - Samsung semiconductor

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Page 20
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM
Rev. 1.01 Oct. 1999
Read Transaction - Example
Figure 15 shows an example of a read transaction. It begins
by activating a bank with an ACT a0 command in an ROWA
packet. A time tRCD later a RD a1 command is issued in a
COLC packet. Note that the ACT command includes the
device, bank, and row address (abbreviated as a0) while the
RD command includes device, bank, and column address
(abbreviated as a1). A time tCAC after the RD command the
read data dualoct Q(a1) is returned by the device. Note that
the packets on the ROW and COL pins use the end of the
packet as a timing reference point, while the packets on the
DQA/DQB pins use the beginning of the packet as a timing
reference point.
A time tCC after the first COLC packet on the COL pins a
second is issued. It contains a RD a2 command. The a2
address has the same device and bank address as the a1
address (and a0 address), but a different column address. A
time tCAC after the second RD command a second read data
dualoct Q(a2) is returned by the device.
Next, a PRER a3 command is issued in an ROWR packet on
the ROW pins. This causes the bank to precharge so that a
different row may be activated in a subsequent transaction or
so that an adjacent bank may be activated. The a3 address
includes the same device and bank address as the a0, a1, and
a2 addresses. The PRER command must occur a time tRAS
or more after the original ACT command (the activation
operation in any DRAM is destructive, and the contents of
the selected row must be restored from the two associated
sense amps of the bank during the tRAS interval). The PRER
command must also occur a time tRDP or more after the last
RD command. Note that the tRDP value shown is greater
than the tRDP,MIN specification in Table 22. This transaction
example reads two dualocts, but there is actually enough
time to read three dualocts before tRDP becomes the limiting
parameter rather than tRAS. If four dualocts were read, the
packet with PRER would need to shift right (be delayed) by
one tCYCLE (note - this case is not shown).
Finally, an ACT b0 command is issued in an ROWR packet
on the ROW pins. The second ACT command must occur a
time tRC or more after the first ACT command and a time tRP
or more after the PRER command. This ensures that the
bank and its associated sense amps are precharged. This
example assumes that the second transaction has the same
device and bank address as the first transaction, but a
different row address. Transaction b may not be started until
transaction a has finished. However, transactions to other
banks or other devices may be issued during transaction a.
Figure 15: Read Transaction Example
CTM/CFM
DQA8..0
DQB8..0
COL4
..COL0
ROW2
..ROW0
T0
T4
T8
T12
T1
T5
T9
T13
T2
T6
T10
T14
T3
T7
T11
T15 T16
T20
T24
T28
T17
T21
T25
T29
T18
T22
T26
T30
T19
T23
T27
T31 T32
T36
T40
T44
T33
T37
T41
T45
T34
T38
T42
T46
T35
T39
T43
T47
RD a1
ACT a0
PRER a3
RD a2
Q (a2)
tRCD
tCAC
tCC
Q (a1)
ACT b0
tRAS
tRC
tRP
Transaction a: RD
a0 = {Da,Ba,Ra}
a1 = {Da,Ba,Ca1}
a2 = {Da,Ba,Ca2}
a3 = {Da,Ba}
tCAC
tRDP
Transaction b: xx
b0 = {Da,Ba,Rb}



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