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KM416RD8ACD-RK80 数据表(PDF) 23 Page - Samsung semiconductor |
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KM416RD8ACD-RK80 数据表(HTML) 23 Page - Samsung semiconductor |
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23 / 64 page ![]() Page 20 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Rev. 1.01 Oct. 1999 Read Transaction - Example Figure 15 shows an example of a read transaction. It begins by activating a bank with an ACT a0 command in an ROWA packet. A time tRCD later a RD a1 command is issued in a COLC packet. Note that the ACT command includes the device, bank, and row address (abbreviated as a0) while the RD command includes device, bank, and column address (abbreviated as a1). A time tCAC after the RD command the read data dualoct Q(a1) is returned by the device. Note that the packets on the ROW and COL pins use the end of the packet as a timing reference point, while the packets on the DQA/DQB pins use the beginning of the packet as a timing reference point. A time tCC after the first COLC packet on the COL pins a second is issued. It contains a RD a2 command. The a2 address has the same device and bank address as the a1 address (and a0 address), but a different column address. A time tCAC after the second RD command a second read data dualoct Q(a2) is returned by the device. Next, a PRER a3 command is issued in an ROWR packet on the ROW pins. This causes the bank to precharge so that a different row may be activated in a subsequent transaction or so that an adjacent bank may be activated. The a3 address includes the same device and bank address as the a0, a1, and a2 addresses. The PRER command must occur a time tRAS or more after the original ACT command (the activation operation in any DRAM is destructive, and the contents of the selected row must be restored from the two associated sense amps of the bank during the tRAS interval). The PRER command must also occur a time tRDP or more after the last RD command. Note that the tRDP value shown is greater than the tRDP,MIN specification in Table 22. This transaction example reads two dualocts, but there is actually enough time to read three dualocts before tRDP becomes the limiting parameter rather than tRAS. If four dualocts were read, the packet with PRER would need to shift right (be delayed) by one tCYCLE (note - this case is not shown). Finally, an ACT b0 command is issued in an ROWR packet on the ROW pins. The second ACT command must occur a time tRC or more after the first ACT command and a time tRP or more after the PRER command. This ensures that the bank and its associated sense amps are precharged. This example assumes that the second transaction has the same device and bank address as the first transaction, but a different row address. Transaction b may not be started until transaction a has finished. However, transactions to other banks or other devices may be issued during transaction a. Figure 15: Read Transaction Example CTM/CFM DQA8..0 DQB8..0 COL4 ..COL0 ROW2 ..ROW0 T0 T4 T8 T12 T1 T5 T9 T13 T2 T6 T10 T14 T3 T7 T11 T15 T16 T20 T24 T28 T17 T21 T25 T29 T18 T22 T26 T30 T19 T23 T27 T31 T32 T36 T40 T44 T33 T37 T41 T45 T34 T38 T42 T46 T35 T39 T43 T47 RD a1 ACT a0 PRER a3 RD a2 Q (a2) tRCD tCAC tCC Q (a1) ACT b0 tRAS tRC tRP Transaction a: RD a0 = {Da,Ba,Ra} a1 = {Da,Ba,Ca1} a2 = {Da,Ba,Ca2} a3 = {Da,Ba} tCAC tRDP Transaction b: xx b0 = {Da,Ba,Rb} |
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