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MSC8152SVT1000B 数据表(PDF) 41 Page - Freescale Semiconductor, Inc |
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MSC8152SVT1000B 数据表(HTML) 41 Page - Freescale Semiconductor, Inc |
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41 / 68 page ![]() Electrical Characteristics MSC8152 Dual-Core Digital Signal Processor Data Sheet, Rev. 1 Freescale Semiconductor 41 Table 22 provides the DDR2 differential specifications for the differential signals MDQS/MDQS and MCK/MCK. Table 23 provides the DDR3 differential specifications for the differential signals MDQS/MDQS and MCK/MCK. 2.6.2 HSSI AC Timing Specifications The following subsections define the AC timing requirements for the SerDes reference clocks, the PCI Express data lines, the Serial RapidIO data lines, and the SGMII data lines. 2.6.2.1 AC Requirements for SerDes Reference Clock Table 24 lists AC requirements for the SerDes reference clocks. Note: Specifications are valid at the recommended operating conditions listed in Table 3. Table 22. DDR2 SDRAM Differential Electrical Characteristics Parameter Symbol Min Max Unit Input AC differential cross-point voltage VIXAC 0.5 × GVDD – 0.175 0.5 × GVDD + 0.175 V Output AC differential cross-point voltage VOXAC 0.5 × GVDD – 0.125 0.5 × GVDD + 0.125 V Table 23. DDR3 SDRAM Differential Electrical Characteristics Parameter Symbol Min Max Unit Input AC differential cross-point voltage VIXAC 0.5 × GVDD – 0.150 0.5 × GVDD + 0.150 V Output AC differential cross-point voltage VOXAC 0.5 × GVDD – 0.115 0.5 × GVDD + 0.115 V Table 24. SR[1–2]_REF_CLK and SR[1–2]_REF_CLK Input Clock Requirements Parameter Symbol Min Typical Max Units Notes SR[1–2]_REF_CLK/SR[1–2]_REF_CLK frequency range tCLK_REF — 100/125 — MHz 1 SR[1–2]_REF_CLK/SR[1–2]_REF_CLK clock frequency tolerance tCLK_TOL –350 — 350 ppm — SR[1–2]_REF_CLK/SR[1–2]_REF_CLK reference clock duty cycle (measured at 1.6 V) tCLK_DUTY 40 50 60 % — SR[1–2]_REF_CLK/SR[1–2]_REF_CLK max deterministic peak-peak jitter at 10-6 BER tCLK_DJ —— 42 ps — SR[1–2]_REF_CLK/SR[1–2]_REF_CLK total reference clock jitter at 10-6 BER (peak-to-peak jitter at ref_clk input) tCLK_TJ —— 86 ps 2 SR[1–2]_REF_CLK/SR[1–2]_REF_CLK rising/falling edge rate tCLKRR/tCLKFR 1—4 V/ns 3 Differential input high voltage VIH 200 — — mV 4 Differential input low voltage VIL — — –200 mV 4 Rising edge rate (SR[1–2]_REF_CLK) to falling edge rate (SR[1–2]_REF_CLK) matching Rise-Fall Matching —— 20 % 5, 6 |
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