S12OSCV2D datasheet(100/126 Pages) FREESCALE

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MC9S12DJ64 Device User Guide — V01.17

100

The setup time can be ignored for this operation.

A.3.1.4 Mass Erase

Erasing a NVM block takes:

The setup time can be ignored for this operation.

A.3.1.5 Blank Check

The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the

first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup

of the command.

Table A-11 NVM Timing Characteristics

Conditions are shown in Table A-4 unless otherwise noted

Num C

Rating

Symbol

Min

Typ

Max

Unit

D External Oscillator Clock

fNVMOSC

0.5

50 1

NOTES:

1. Restrictions for oscillator in crystal mode apply!

MHz

D Bus frequency for Programming or Erase Operations

fNVMBUS

MHz

D Operating Frequency

fNVMOP

150

200

kHz

P Single Word Programming Time

tswpgm

46 2

2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency

fbus.

74.5 3

3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.

Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.

µs

5D Flash Burst Programming consecutive word 4

4. Burst Programming operations are not applicable to EEPROM

tbwpgm

20.4 2

31 3

µs

6D Flash Burst Programming Time for 32 Words 4

tbrpgm

678.4 2

1035.5 3

µs

P Sector Erase Time

tera

20 5

5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.

26.7 3

P Mass Erase Time

tmass

100 5

133 3

D Blank Check Time Flash per block

tcheck

11 6

6. Minimum time, if first word in the array is not blank

32778 7

7. Maximum time to complete check on an erased block

tcyc

D Blank Check Time EEPROM per block

tcheck

11 6

20587

tcyc

era

4000

NVMOP

---------------------

⋅

≈

mass

20000

NVMOP

---------------------

⋅

≈

check

location t

cyc

10 t

cyc

⋅

≈

S12OSCV2D 数据表(PDF) 100 Page - Freescale Semiconductor, Inc

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