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STM32F217VG 数据表(PDF) 128 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 128 Page - STMicroelectronics |
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128 / 175 page ![]() Electrical characteristics STM32F21xxx 128/175 DocID17050 Rev 9 6.3.24 Embedded reference voltage The parameters given in Table 70 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 13. 6.3.25 FSMC characteristics Asynchronous waveforms and timings Figure 54 through Figure 57 represent asynchronous waveforms and Table 71 through Table 74 provide the corresponding timings. The results shown in these tables are obtained with the following FSMC configuration: • AddressSetupTime = 1 • AddressHoldTime = 1 • DataSetupTime = 1 • BusTurnAroundDuration = 0x0 In all timing tables, the THCLK is the HCLK clock period. Table 70. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V TS_vrefint(1) 1. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the internal reference voltage 10 - - µs VRERINT_s (2) 2. Guaranteed by design, not tested in production. Internal reference voltage spread over the temperature range VDD = 3 V - 3 5 mV TCoeff(2) Temperature coefficient - 30 50 ppm/°C tSTART(2) Startup time - 6 10 µs |
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