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STM32F217VG 数据表(PDF) 130 Page - STMicroelectronics |
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STM32F217VG 数据表(HTML) 130 Page - STMicroelectronics |
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130 / 175 page ![]() Electrical characteristics STM32F21xxx 130/175 DocID17050 Rev 9 Figure 55. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms 1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used. 1. CL = 30 pF. 2. Based on characterization, not tested in production. Table 72. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2) Symbol Parameter Min Max Unit tw(NE) FSMC_NE low time 3THCLK 3THCLK+ 4 ns tv(NWE_NE) FSMC_NEx low to FSMC_NWE low THCLK– 0.5 THCLK+ 0.5 ns tw(NWE) FSMC_NWE low time THCLK– 0.5 THCLK+ 3 ns th(NE_NWE) FSMC_NWE high to FSMC_NE high hold time THCLK -ns tv(A_NE) FSMC_NEx low to FSMC_A valid - 0 ns th(A_NWE) Address hold time after FSMC_NWE high THCLK- 3 - ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid - 0.5 ns th(BL_NWE) FSMC_BL hold time after FSMC_NWE high THCLK– 1 - ns tv(Data_NE) Data to FSMC_NEx low to Data valid - THCLK+ 5 ns th(Data_NWE) Data hold time after FSMC_NWE high THCLK+0.5 - ns tv(NADV_NE) FSMC_NEx low to FSMC_NADV low - 2 ns tw(NADV) FSMC_NADV low time - THCLK+ 1.5 ns NBL Data FSMC_NEx FSMC_NBL[1:0] FSMC_D[15:0] tv(BL_NE) th(Data_NWE) FSMC_NOE Address FSMC_A[25:0] tv(A_NE) tw(NWE) FSMC_NWE tv(NWE_NE) t h(NE_NWE) th(A_NWE) th(BL_NWE) tv(Data_NE) tw(NE) ai14990 FSMC_NADV(1) t v(NADV_NE) tw(NADV) |
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