 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
MPC5601PEF0MLL4R 数据表(PDF) 42 Page - Freescale Semiconductor, Inc |
|
|
|||||||||||||||||||||||||||||
MPC5601PEF0MLL4R 数据表(HTML) 42 Page - Freescale Semiconductor, Inc |
|
|
42 / 95 page  MPC5602P Microcontroller Data Sheet, Rev. 4.1 Freescale Semiconductor 42 3.6 Electromagnetic interference (EMI) characteristics 3.7 Electrostatic discharge (ESD) characteristics 3.8 Power management electrical characteristics 3.8.1 Voltage regulator electrical characteristics The internal voltage regulator requires an external NPN (BCP68, BCX68 or BC817) ballast to be connected as shown in Figure 8. Capacitances should be placed on the board as near as possible to the associated pins. Care should also be taken to limit the serial inductance of the board to less than 5 nH. Table 11. EMI testing specifications Symbol Parameter Conditions Clocks Frequency Level (Typ) Unit VEME Radiated emissions VDD =5.0 V; TA =25°C Other device configuration, test conditions and EM testing per standard IEC61967-2 fOSC =8MHz fCPU =64MHz No PLL frequency modulation 150 kHz–150 MHz 11 dBµV 150–1000 MHz 13 IEC level M — fOSC =8MHz fCPU =64MHz ±4% PLL frequency modulation 150 kHz–150 MHz 8 dBµV 150–1000 MHz 12 IEC level N — VDD =3.3 V; TA =25°C Other device configuration, test conditions and EM testing per standard IEC61967-2 fOSC =8MHz fCPU =64MHz No PLL frequency modulation 150 kHz–150 MHz 9 dBµV 150–1000 MHz 12 IEC level M — fOSC =8MHz fCPU =64MHz ±4% PLL frequency modulation 150 kHz–150 MHz 7 dBµV 150–1000 MHz 12 IEC level N — Table 12. ESD ratings1,2 1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. 2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device specification requirements. Complete DC parametric and functional testing shall be performed per applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. Symbol Parameter Conditions Value Unit VESD(HBM) SR Electrostatic discharge (Human Body Model) — 2000 V VESD(CDM) SR Electrostatic discharge (Charged Device Model) — 750 (corners) V 500 (other) |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
