MPC5601PEF0MLL4R datasheet(64/95 Pages) FREESCALE

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MPC5602P Microcontroller Data Sheet, Rev. 4.1

Freescale Semiconductor

3.15.2

Flash memory power supply DC characteristics

Table 32 shows the power supply DC characteristics on external supply.

Table 30. Flash memory module life

Symbol C

Parameter

Conditions

Value

Unit

Min

Typ

P/E

C Number of program/erase cycles per

block for 16 KB blocks over the operating

temperature range (TJ)

—

100,000

—

cycles

P/E

C Number of program/erase cycles per

block for 32 KB blocks over the operating

temperature range (TJ)

—

10,000 100,000 cycles

P/E

C Number of program/erase cycles per

block for 128 KB blocks over the operating

temperature range (TJ)

—

1,000

100,000 cycles

Retention C Minimum data retention at 85 °C average

ambient temperature1

1 Ambient temperature averaged over duration of application, not to exceed recommended product operating

temperature range.

Blocks with 0–1,000 P/E cycles

—

years

Blocks with 10,000 P/E cycles

—

years

Blocks with 100,000 P/E cycles

—

years

Table 31. Flash memory read access timing

Symbol C

Parameter

Conditions1

1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified

Max value

Unit

fmax

C Maximum working frequency for code flash memory at given

number of wait states in worst conditions

2 wait states

MHz

0 wait states

fmax

C Maximum working frequency for data flash memory at given

number of wait states in worst conditions

8 wait states

MHz

Table 32. Flash memory power supply DC electrical characteristics

Symbol

Parameter

Conditions1

1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified.

Value

Unit

Min

Typ

Max

IFLPW CC D Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during low-power mode

Code flash memory

—

900

µA

IFPWD CC D Sum of the current consumption on VDD_HV_IOx

and VDD_LV_CORx during power-down mode

Code flash memory

—

150

µA

Data flash memory

—

150

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