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STV3550 数据表(PDF) 70 Page - STMicroelectronics |
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STV3550 数据表(HTML) 70 Page - STMicroelectronics |
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70 / 144 page ![]() 70/144 STV3550 CPU and System Management Functional Description Write operations in Flash require specific sequences on the data and address buses. Since the STV3550 can drive any data and any addresses on the buses, write operations into Flash can be performed if the Flash device is used as an asynchronous memory. Control signals such as chip select, write enable and output enable (active low) can be configured by software, so that they are asserted or not by the STV3550 Memory Interface during each operation. 6.3.8.2 Flash Requirements Time is expressed in number of STV3550 system clock cycles. Phase refers to half a cycle. ● Flash size up to 16 Mbits ● Access Cycle Time from 2 to 127 cycles (tAC) ● Bus Release Time from 0 to 15 cycles (tBR) ● Data Drive Delay from 0 to 31 phases after start of Access Cycle (tDD) ● Falling edge of NOT_CS_FLASH from 0 to 15 phases or cycles after start of Read Access Cycle (tCSr1) ● Rising edge of NOT_CS_FLASH from 0 to 15 phases or cycles before end of Read Access Cycle (tCSr2) ● Falling edge of NOT_CS_FLASH from 0 to 15 phases or cycles after start of Write Access Cycle (tCSw1) ● Rising edge of NOT_CS_FLASH from 0 to 15 phases or cycles before end of Write Access Cycle (tCSw2) ● Falling edge of NOT_CAS (NOT_OE) from 0 to 15 phases or cycles after start of Read Access Cycle (tOE1) ● Rising edge of NOT_CAS (NOT_OE) from 0 to 15 phases or cycles before end of Read Access Cycle (tOE2) ● Falling edge of RD_NOT_WR from 0 to 15 phases or cycles after start of Write Access Cycle (tWE1) ● Rising edge of RD_NOT_WR from 0 to 15 phases or cycles before end of Write Access Cycle (tWE2) ● Latch Point from 0 to 15 cycles before end of Access Cycle (tLP) |
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