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RA4M3 数据表(PDF) 32 Page - Renesas Technology Corp |
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RA4M3 数据表(HTML) 32 Page - Renesas Technology Corp |
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32 / 92 page ![]() ● Cin = 8 pF, 32 pins, Input frequency = 10 MHz ● Cload = 30 pF, 32 pins, Output frequency = 10 MHz Leakage current of IO = Σ (VOL × IOL) / Voltage + Σ ((VCC - VOH) × IOH) / Voltage = (20 mA × 1 V) × 8 / 3.5 V + (1 mA × 0.5 V) × 12 / 3.5 V + ((VCC - (VCC - 0.5 V)) × 1 mA) × 12 / 3.5 V = 45.7 mA + 1.71 mA + 1.71 mA = 49.1 mA Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage = ((8 pF × 32) × 10 MHz + (30 pF × 32) × 10 MHz) × 3.5 V = 42.6 mA Total power consumption = Voltage × (Leakage current + Dynamic current) = (70 mA × 3.5 V) + (49.1 mA + 42.6 mA) × 3.5 V = 566 mW (0.566 W) Tj = Ta + θja × Total power consumption = 100 °C + 33.0 °C/W × 0.566W = 118.7 °C 2.3 AC Characteristics 2.3.1 Frequency Table 2.14 Operation frequency value in high-speed mode Parameter Symbol Min Typ Max Unit Operation frequency System clock (ICLK) f — — 100 MHz Peripheral module clock (PCLKA) — — 100 Peripheral module clock (PCLKB) — — 50 Peripheral module clock (PCLKC) —*2 — 50 Peripheral module clock (PCLKD) — — 100 Flash interface clock (FCLK) —*1 — 50 Note 1. FCLK must run at a frequency of at least 4 MHz when programming or erasing the flash memory. Note 2. When the ADC12 is used, the PCLKC frequency must be at least 1 MHz. Table 2.15 Operation frequency value in low-speed mode Parameter Symbol Min Typ Max Unit Operation frequency System clock (ICLK) f — — 1 MHz Peripheral module clock (PCLKA) — — 1 Peripheral module clock (PCLKB) — — 1 Peripheral module clock (PCLKC) *2 —*2 — 1 Peripheral module clock (PCLKD) — — 1 Flash interface clock (FCLK)*1 — — 1 Note 1. Programming or erasing the flash memory is disabled in low-speed mode. Note 2. When the ADC12 is used, the PCLKC frequency must be set to at least 1 MHz. RA4M3 Datasheet 2. Electrical Characteristics R01DS0368EJ0120 Rev.1.20 Dec 2, 2020 Page 32 of 92 |
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