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RA4M3 数据表(PDF) 75 Page - Renesas Technology Corp |
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RA4M3 数据表(HTML) 75 Page - Renesas Technology Corp |
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75 / 92 page  Table 2.47 Data flash memory characteristics (2 of 2) Conditions: Program or erase: FCLK = 4 to 50 MHz Read: FCLK ≤ 50 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Test conditions Min Typ*6 Max Min Typ*6 Max Second suspend delay during erasure in suspend priority mode 64-byte tDSESD2 — — 300 — — 300 µs 128-byte — — 390 — — 390 256-byte — — 570 — — 570 Suspend delay during erasing in erasure priority mode 64-byte tDSEED — — 300 — — 300 µs 128-byte — — 390 — — 390 256-byte — — 570 — — 570 First erasing resume time during erasure in suspend priority mode*5 tDREST1 — — 300 — — 300 µs Second erasing resume time during erasure in suspend priority mode tDREST2 — — 126 — — 70 µs Erasing resume time during erasure in erasure priority mode tDREET — — 126 — — 70 µs Forced stop command tFD — — 32 — — 20 µs Data hold time*3 tDRP 10*3 *4 — — 10*3 *4 — — Year Note 1. The reprogram/erase cycle is the number of erasures for each block. When the reprogram/erase cycle is n times (n = 125,000), erasing can be performed n times for each block. For example, when 4-byte programming is performed 16 times for different addresses in 64-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address several times as one erasure is not enabled. Overwriting is prohibited. Note 2. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to the minimum value. Note 3. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range. Note 4. This result is obtained from reliability testing. Note 5. Time for resumption includes time for reapplying the erasing pulse (up to one full pulse) that was cut off at the time of suspension. Note 6. The reference value at VCC = 3.3 V and room temperature. 2.12.3 Option Setting Memory Characteristics Table 2.48 Option setting memory characteristics Conditions: Program: FCLK = 4 to 50 MHz Read: FCLK ≤ 50 MHz Parameter Symbol FCLK = 4 MHz 20 MHz ≤ FCLK ≤ 50 MHz Unit Test conditions Min Typ*4 Max Min Typ*4 Max Programming time NOPC ≤ 100 times tOP — 83 309 — 45 162 ms Programming time NOPC > 100 times tOP — 100 371 — 55 195 ms Reprogramming cycle NOPC 20000*1 — — 20000*1 — — Times Data hold time*2 tDRP 10*2 *3 — — 10*2 *3 — — Years Note 1. This is the minimum number of times to guarantee all the characteristics after reprogramming. The guaranteed range is from 1 to the minimum value. Note 2. This indicates the minimum value of the characteristic when reprogramming is performed within the specified range. Note 3. This result is obtained from reliability testing. Note 4. The reference value at VCC = 3.3 V and room temperature. 2.13 Boundary Scan RA4M3 Datasheet 2. Electrical Characteristics R01DS0368EJ0120 Rev.1.20 Dec 2, 2020 Page 75 of 92 |
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