RA4M3 datasheet(63/92 Pages) RENESAS

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Observation

point

50 pF

USB_DP

USB_DM



Figure 2.53

Test circuit in full-speed mode

Table 2.35

USBFS characteristics (USB_DP and USB_DM pin characteristics)

Conditions: VCC = AVCC0 = VCC_USB = VBATT = 3.0 to 3.6 V, 2.7 ≤ VREFH0/VREFH ≤ AVCC0, USBCLK = 48 MHz

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Battery Charging

Specification

D+ sink current

IDP_SINK

—

175

µA

—

D- sink current

IDM_SINK

—

175

µA

—

DCD source current

IDP_SRC

—

µA

—

Data detection voltage

VDAT_REF

0.25

—

0.4

—

D+ source voltage

VDP_SRC

0.5

—

0.7

Outout current = 250 µA

D- source voltage

VDM_SRC

0.5

—

0.7

Outout current = 250 µA

2.5

ADC12 Characteristics

Table 2.36

A/D conversion characteristics for unit 0 (1 of 2)

Conditions: PCLKC = 1 to 50 MHz

Parameter

Min

Typ Max Unit Test conditions

Frequency

—

MHz —

Analog input capacitance

—

Quantization error

—

±0.5 —

LSB —

Resolution

—

Bits

—

High-precision high-speed

channels

(AN000 to AN005)

Conversion time*1

(operation at PCLKC =

50 MHz)

Permissible signal

source impedance

Max. = 1 kΩ

0.52 (0.26)*2 —

—

μs

Sampling in 13

states

Max. = 400 Ω

0.40 (0.14)*2 —

—

μs

Sampling in 7 states

VCC = AVCC0 = 3.0

to 3.6 V

3.0 V ≤ VREFH0 ≤

AVCC0

Offset error

—

±1.0 ±2.5 LSB —

Full-scale error

—

±1.0 ±2.5 LSB —

Absolute accuracy

—

±2.0 ±4.5 LSB —

DNL differential nonlinearity error

—

±0.5 ±1.5 LSB —

INL integral nonlinearity error

—

±1.0 ±2.5 LSB —

RA4M3 Datasheet

2. Electrical Characteristics

R01DS0368EJ0120 Rev.1.20

Dec 2, 2020

Page 63 of 92

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