RA4M3 datasheet(24/92 Pages) RENESAS

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2.2.5

Operating and Standby Current

Table 2.7

Operating and standby current (1 of 2)

Parameter

Symbol

Min Typ

Max

Unit Test conditions

Supply

current*1

High-speed

mode

Maximum*2 *13

ICC*3

—

ICLK = 100 MHz

PCLKA = 100

MHz

PCLKB = 50

MHz

PCLKC = 50

MHz

PCLKD = 100

MHz

FCLK = 50 MHz

CoreMark®*5 *6 *12

—

Normal mode

All peripheral clocks enabled,

while (1) code executing from

flash*4 *12

—

All peripheral clocks disabled,

while (1) code executing from

flash*5 *6 *12

—

Sleep mode*5

—

7*6

*12

47*7

*13

Increase during

BGO operation

Data flash P/E

—

Code flash P/E

—

Low-speed mode*5 *10

—

1.9

—

ICLK = 1 MHz

Subosc-speed mode*5 *11

—

1.7

—

ICLK = 32.768

kHz

Software Standby mode

SNZCR.RXDREQEN = 1

—

SNZCR.RXDREQEN = 0

—

1.6

—

Deep Software

Standby mode

Power supplied to Standby SRAM and USB

resume detecting unit

—

16.9

131

µA

—

Power not

supplied to

SRAM or USB

resume

detecting unit

Power-on reset circuit low

power function disabled

—

11.8

—

Power-on reset circuit low

power function enabled

—

4.8

—

Increase when

the RTC and

AGT are

operating

When the low-speed on-chip

oscillator (LOCO) is in use

—

4.0

—

When a crystal oscillator for low

clock loads is in use

—

1.2

—

When a crystal oscillator for

standard clock loads is in use

—

1.5

—

RTC operating while VCC is off (with the

battery backup function, only the RTC and

sub-clock oscillator operate)

When a crystal

oscillator for low

clock loads is in use

—

0.9

—

VBATT = 1.8 V,

VCC = 0 V

—

1.3

—

VBATT = 3.3 V,

VCC = 0 V

When a crystal

oscillator for

standard clock loads

is in use

—

1.0

—

VBATT = 1.8 V,

VCC = 0 V

—

1.7

—

VBATT = 3.3 V,

VCC = 0 V

Inrush current on returning from deep

software standby mode

Inrush current*8

IRUSH

—

160

—

Energy of inrush

current*8

ERUSH

—

1.0

—

µC

RA4M3 Datasheet

2. Electrical Characteristics

R01DS0368EJ0120 Rev.1.20

Dec 2, 2020

Page 24 of 92

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