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RA4M3 数据表(PDF) 36 Page - Renesas Technology Corp

部件名 RA4M3
功能描述  Armv8-M architecture with the main extension
PDF  92 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

RA4M3 数据表(HTML) 36 Page - Renesas Technology Corp

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Table 2.19
Reset timing (2 of 2)
Parameter
Symbol Min Typ Max
Unit Test conditions
Wait time after internal reset cancellation
(IWDT reset, WDT reset, software reset, SRAM parity error reset, SRAM ECC error
reset, bus master MPU error reset, TrustZone error reset, Cache parity error reset)
tRESW2
324 397.7 µs
VCC
RES
Internal reset signal
(low is valid)
tRESWP
tRESWT
VCCmin
Figure 2.12
RES pin input timing under the condition that VCC exceeds VPOR voltage threshold
RES
Internal reset signal
(low is valid)
tRESWD, tRESWS, tRESW
tRESWT
Figure 2.13
Reset input timing
2.3.4
Wakeup Timing
Table 2.20
Timing of recovery from low power modes (1 of 2)
Parameter
Symbol
Min Typ
Max
Unit Test conditions
Recovery time from
Software Standby
mode*1
Crystal resonator
connected to main clock
oscillator
System clock source is
main clock oscillator*2
tSBYMC*13 —
2.1
2.4
ms
Figure 2.14
The division ratio of all
oscillators is 1.
System clock source is
PLL with main clock
oscillator*3
tSBYPC*13 —
2.2
2.6
ms
External clock input to
main clock oscillator
System clock source is
main clock oscillator*4
tSBYEX*13 —
45
125
μs
System clock source is
PLL with main clock
oscillator*5
tSBYPE*13 —
170
255
μs
System clock source is sub-clock oscillator*6 *11
tSBYSC*13 —
0.7
0.8
ms
System clock source is LOCO*7 *11
tSBYLO*13 —
0.7
0.9
ms
System clock source is HOCO clock oscillator*8
tSBYHO*13 —
55
130
µs
System clock source is PLL with HOCO*9
tSBYPH*13 —
175
265
µs
System clock source is MOCO clock oscillator*10
tSBYMO*13 —
35
65
µs
RA4M3 Datasheet
2. Electrical Characteristics
R01DS0368EJ0120 Rev.1.20
Dec 2, 2020
Page 36 of 92



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