RA4M3 datasheet(72/92 Pages) RENESAS

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VCC

tVOFFBATT

VDETBATT

VBATTSW

VBATT

VCC supply

VBATT supply

VCC supply

Backup power

area

Figure 2.60

Battery backup function characteristics

VBATT

tBATTOFF

Vbattldet

VBATTMON

tBATTdet

VBATTMNSEL

td(E-A)

Figure 2.61

Battery backup function characteristics

2.11

CTSU Characteristics

Table 2.45

CTSU characteristics

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

External capacitance connected to TSCAP pin

Ctscap

—

TS pin capacitive load

Cbase

—

Permissible output high current

ΣIoH

—

-40

When the mutual capacitance

method is applied

2.12

Flash Memory Characteristics

2.12.1

Code Flash Memory Characteristics

Table 2.46

Code flash memory characteristics (1 of 2)

Conditions: Program or erase: FCLK = 4 to 50 MHz

Read: FCLK ≤ 50 MHz

Parameter

Symbol

FCLK = 4 MHz

20 MHz ≤ FCLK ≤ 50 MHz

Unit

Test

conditions

Min

Typ*6 Max Min

Typ*6

Max

Programming time

NPEC ≤ 100 times

128-byte

tP128

—

0.75

13.2 —

0.34

6.0

8-KB

tP8K

—

176

—

32-KB

tP32K

—

194

704

—

320

RA4M3 Datasheet

2. Electrical Characteristics

R01DS0368EJ0120 Rev.1.20

Dec 2, 2020

Page 72 of 92

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