MMPF0200Z datasheet(45/118 Pages) NXP

45 / 118 page

Analog Integrated Circuit Device Data



Freescale Semiconductor

PF0200Z

Functional Block Requirements and Behaviors

Power Generation

SW1A/B (SINGLE PHASE) (CONTINUED)

Transient Load Regulation

• Transient load = 0 to 1.25 A, di/dt = 100 mA/

s

Overshoot

Undershoot

VSW1ABLOTR

–

Quiescent Current

PFM Mode

APS Mode

ISW1ABQ

–

235

–

µA

SW1A P-MOSFET RDSON

VINSW1A = 3.3 V

RONSW1AP

–

215

245



SW1A N-MOSFET RDSON

VINSW1A = 3.3 V

RONSW1AN

–

258

326



SW1A P-MOSFET Leakage Current

VINSW1A = 4.5 V

ISW1APQ

––

7.5

µA

SW1A N-MOSFET Leakage Current

VINSW1A = 4.5 V

ISW1ANQ

––

2.5

µA

SW1B P-MOSFET RDSON

VINSW1B = 3.3 V

RONSW1BP

–

215

245



SW1B N-MOSFET RDSON

VINSW1B = 3.3 V

RONSW1BN

–

258

326



SW1B P-MOSFET Leakage Current

VINSW1B = 4.5 V

ISW1BPQ

––

7.5

µA

SW1B N-MOSFET Leakage Current

VINSW1B = 4.5 V

ISW1BNQ

––

2.5

µA

Discharge Resistance

RSW1ABDIS

–

600

–



Notes

38.

Current rating of SW1AB supports the Power Virus mode of operation of the i.MX6X processor.

Table 47. SW1A/B Electrical Characteristics (continued)

All parameters are specified at TA = -40 to 85 °C, VIN = VINSW1x = 3.6 V, VSW1AB = 1.2 V, ISW1AB = 100 mA,

SW1AB_PWRSTG[2:0] = [111], typical external component values, fSW1AB = 2.0 MHz, unless otherwise noted. Typical values

are characterized at VIN = VINSW1x = 3.6 V, VSW1AV = 1.2 V, ISW1AB = 100 mA, SW1AB_PWRSTG[2:0] = [111], and 25 °C,

unless otherwise noted.

Parameter

Symbol

Min

Typ

Max

Unit

MMPF0200Z 数据表(PDF) 45 Page - NXP Semiconductors

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