MCP2518FD datasheet(77/96 Pages) MICROCHIP

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 2019 Microchip Technology Inc.

DS20006027A-page 77

MCP2518FD

TABLE 7-2:

CLKOUT AND SOF AC CHARACTERISTICS

TABLE 7-3:

CRYSTAL OSCILLATOR AC CHARACTERISTICS

AC Specifications

Electrical Characteristics:

Extended (E): TAMB = –40°C to +125°C; High (H): TAMB = –40°C to +150°C;

VDD = 2.7V to 5.5V

Sym.

Characteristic

Min.

Typ.

Max.

Units

Conditions/Comments

TCLKOH

CLKO Output High

—

—ns

at 40 MHz (Note 1)

TCLKOL

CLKO Output Low

—

—ns

Note 1

TCLKOR

CLKO Output Rise

—

—5

Note 1

TCLKOF

CLKO Output Fall

—

—5

Note 1

TSOFH

SOF Output High

—31 TOSC

—ns

Note 2

TSOFPD

SOF Propagation Delay:

RXCAN falling edge to SOF

rising edge

—1 TOSC

—ns

Note 2

Note 1: Characterized; not 100% tested.

2: Design guidance only.

AC Specifications

Electrical Characteristics:

Extended (E): TAMB = –40°C to +125°C; High (H): TAMB = –40°C to +150°C;

VDD = 2.7V to 5.5V

Sym.

Characteristic

Min.

Typ.

Max.

Units

Conditions/Comments

FOSC1,CLKI

OSC1 Input Frequency

MHz

External digital clock

FOSC1,4M

OSC1 Input Frequency

4 - 0.5%

4 + 0.5%

MHz

4 MHz crystal/resonator (Note 1)

FDRIFT

SYSCLK frequency drift

—

ppm

Additional frequency drift of

SYSCLK due to internal PLL at

4MHz (Note 1)

FOSC1,20M

OSC1 Input Frequency

20 - 0.5%

20 + 0.5%

MHz

20 MHz crystal/resonator

(Note 1)

FOSC1,40M

OSC1 Input Frequency

40 - 0.5%

40 + 0.5%

MHz

40 MHz crystal/resonator

(Note 1)

TOSC1

TOSC1=1/FOSC1,x

—

—ns

TOSC1H

OSC1 Input High

0.45 *

TOSC

—0.55 *

TOSC

Note 1

TOSC1L

OSC1 Input Low

0.45 *

TOSC

—0.55 *

TOSC

Note 1

TOSC1R

OSC1 Input Rise

—

—20

Note 2

TOSC1F

OSC1 Input Fall

—

—20

Note 2

DCOSC1

Duty Cycle on OSC1

External clock duty cycle require-

ment (Note 1)

TOSCSTAB

Oscillator stabilization

period

—

From POR to final frequency

(Note 1)

TOSCSLEEP Oscillator stabilization from

Sleep

—

From Sleep to final frequency

(Note 1)

GM,4M

Transconductance

1470

—2210

A/V 4 MHz crystal (Note 2)

GM,40M

Transconductance

2040

—3060

A/V 40 MHz crystal (Note 2)

Note 1: Characterized; not 100% tested.

2: Design guidance only.

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