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ADIN1110CCPZ-R7 数据表(PDF) 6 Page - Analog Devices |
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ADIN1110CCPZ-R7 数据表(HTML) 6 Page - Analog Devices |
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6 / 107 page ![]() Data Sheet ADIN1110 TIMING CHARACTERISTICS analog.com Rev. B | 6 of 107 POWER-UP TIMING Table 3. Power-Up Timing Parameter Description Min Typ Max Unit tRAMP Power supply ramp time 40 ms t1 Minimum time interval to internal power good1 20 43 ms t2 Hardware configuration latch time 6 8 14 μs t3 Management interface (SPI) active 50 ms 1 The minimum time interval is referenced to the last supply to reach its rising threshold. There is no specific power supply sequencing required. Figure 2. Power-Up Timing SPI Table 4. Parameter1, 2 Description Min Typ Max Unit t1 SCLK cycle time 40 ns t2 SCLK high time 17 ns t3 SCLK low time 17 ns t4 CS falling edge to SCLK rising edge setup time 17 ns t5 Last SCLK rising edge to CS rising edge 17 ns t6 CS high time 40 ns t7 Data setup time 5 ns t8 Data hold time 5 ns t9 3 SCLK falling edge to SDO valid 12 ns t10 3 CS rising edge to SDO tristate 15 ns t11 3 CS falling edge to SDO valid (for readback MSB only) 12 ns 1 Guaranteed by design and characterization. Not production tested. 2 All input signals are specified with rise time (tR) = fall time (tF) = 5 ns (10% to 90% of VDDIO) and timed from a voltage level of 1.2 V. |
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