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STCMB1 数据表(PDF) 49 Page - STMicroelectronics

部件名 STCMB1
功能描述  TM PFC with X-cap discharge and LLC resonant combo controller
PDF  59 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STCMB1 数据表(HTML) 49 Page - STMicroelectronics

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STCMB1
Application information
59
The bootstrap structure introduces a voltage drop while recharging CBOOT (e.g.: when the
low-side driver is on), which increases with the operating frequency and with the size of the
external power MOS. It is the sum of the drop across the R(DS)ON and the forward drop
across the series diode. At low frequency this drop is very small and can be neglected but,
as the operating frequency increases, it must be taken into account. In fact, the drop
reduces the amplitude of the driving signal and can significantly increase the R(DS)ON of the
external high-side MOSFET and then its conductive loss.
Figure 30. Bootstrap supply: a) standard circuit; b) internal bootstrap synchronous
This concern applies to converters designed with a high resonance frequency (indicatively,
> 150 kHz), so that they run at high frequency also at the full load. Otherwise, the converter
will run at high frequency at the light-load, where the current flowing in the MOSFETs of the
half-bridge leg is low, so that, generally, a slight R(DS)ON rise is not an issue. However, it is
wise to check this point anyway and Equation 30 is useful to estimate the drop on the
bootstrap driver.
Equation 30
where Qg is the gate charge of the external power MOSFET, R(DS)on is the on-resistance of
the bootstrap DMOS (230
, typ.) and Tcharge is the on-time of the bootstrap driver, which
equals about a half switching period minus the deadtime TD. For example, using
a MOSFET with a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at
a switching frequency of 200 kHz:
Equation 31
A typical range of the bootstrap capacitor (Cboot) is from 100 to 470 nF.
If a significant drop on the bootstrap driver is an issue, an external ultrafast diode can be
used, thus saving the drop on the R(DS)ON of the internal DMOS. In this case it is also
recommended to add a small resistor (in the ten
) in series to the diode to prevent the
F
D S
o n
c h a r g e
g
F
D S
o n
c h a r g e
D r o p
V
+
R
T
Q
=
V
+
R
I=
V
V
3 . 7
=
0 . 6
+
2 3 0
1 0
0 . 3
1 0
2 . 5
1 0
3 0
=
V
6
6
9
D r o p



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