| 数据搜索系统,热门电子元器件搜索 |
|
STCMB1 数据表(PDF) 49 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STCMB1 数据表(HTML) 49 Page - STMicroelectronics |
|
49 / 59 page ![]() DocID028958 Rev 4 49/59 STCMB1 Application information 59 The bootstrap structure introduces a voltage drop while recharging CBOOT (e.g.: when the low-side driver is on), which increases with the operating frequency and with the size of the external power MOS. It is the sum of the drop across the R(DS)ON and the forward drop across the series diode. At low frequency this drop is very small and can be neglected but, as the operating frequency increases, it must be taken into account. In fact, the drop reduces the amplitude of the driving signal and can significantly increase the R(DS)ON of the external high-side MOSFET and then its conductive loss. Figure 30. Bootstrap supply: a) standard circuit; b) internal bootstrap synchronous This concern applies to converters designed with a high resonance frequency (indicatively, > 150 kHz), so that they run at high frequency also at the full load. Otherwise, the converter will run at high frequency at the light-load, where the current flowing in the MOSFETs of the half-bridge leg is low, so that, generally, a slight R(DS)ON rise is not an issue. However, it is wise to check this point anyway and Equation 30 is useful to estimate the drop on the bootstrap driver. Equation 30 where Qg is the gate charge of the external power MOSFET, R(DS)on is the on-resistance of the bootstrap DMOS (230 , typ.) and Tcharge is the on-time of the bootstrap driver, which equals about a half switching period minus the deadtime TD. For example, using a MOSFET with a total gate charge of 30 nC, the drop on the bootstrap driver is about 3 V at a switching frequency of 200 kHz: Equation 31 A typical range of the bootstrap capacitor (Cboot) is from 100 to 470 nF. If a significant drop on the bootstrap driver is an issue, an external ultrafast diode can be used, thus saving the drop on the R(DS)ON of the internal DMOS. In this case it is also recommended to add a small resistor (in the ten ) in series to the diode to prevent the F D S o n c h a r g e g F D S o n c h a r g e D r o p V + R T Q = V + R I= V V 3 . 7 = 0 . 6 + 2 3 0 1 0 0 . 3 1 0 2 . 5 1 0 3 0 = V 6 6 9 D r o p |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |