STCMB1 datasheet(13/59 Pages) STMICROELECTRONICS

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STCMB1

Electrical data

PFC - feedback failure protection (FFP)

VFB_D

Disable threshold

(1)Voltage falling

0.42

0.46

0.5

TDB

FFP debounce time

µs

PFC - current sensing comparators

IISEN_PFC

Input bias current

VISEN_PFC = -0.5 V

4.8

µA

VISEN_PFC

OCP threshold

(1)VCOMP = upper clamp

-0.46

-0.5

-0.54

td(H-L)

Delay to output

220

280

VISEN_PFC_Z

ZCD anticipation level and THD

optimizer threshold

-25

PFC - internal start-up timer

tSTART_DEL

Start-up delay

After VISEN_PFC > VISEN_PFC_Z

810

µs

PFC - GATE DRIVER

VOL

Output low voltage

Isink = 100 mA

0.4

0.7

VOH

Output high voltage

Isource = 5 mA

14.7

14.9

Voltage fall time

From 15 to 1.5 V

Voltage rise time

From 0 to 10 V

110

UVLO saturation

VVCC = 0 to VVCCon, Isink = 1 mA

1.1

HB - high-side floating gate drive supply

RDS(on)

Synchronous bootstrap diode on-

resistance

VLVG = HIGH

230



HB - input voltage sensing (dc brown-out)

VFB_E

Enable voltage

(1)Voltage rising

2.34

2.4

2.49

VFB_D

Disable voltage

(1)Voltage falling

1.7

1.75

1.8

HB - oscillator

VCFp

Ramp peak

(1)VSTBY > 1.34 V

1.44

1.5

1.56

(1)VSTBY < 1.26 V

1.775

1.85 1.925

VCFv

Ramp valley

VRFMIN

Voltage reference

(1)

1.93

2.08

(1)IRFMIN = -2 mA

1.93

2.08

Output duty cycle (HVG and

LVG)(2)

VSTBY = 2 V

RRFMIN = 5.15 k

TSH

Time-shift

RRFMIN = 22.5 k

8.5

9.5

µs

RRFMIN = 5.15 k

2.1

2.25

2.4

fHB

Max. operating frequency

500

kHz

Mirroring ratio ICF / IRFMIN

-0.97

1.03

RRFMIN

Timing resistor range

100



Table 4. Electrical characteristics (continued)

Symbol

Parameter

Test condition

Min.

Typ.

Max. Unit

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