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STCMB1 数据表(PDF) 14 Page - STMicroelectronics |
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STCMB1 数据表(HTML) 14 Page - STMicroelectronics |
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14 / 59 page ![]() Electrical data STCMB1 14/59 DocID028958 Rev 4 HB - adaptive deadtime function TD_max Maximum deadtime - 0.7 - - µs TD_min Minimum deadtime - - - 270 µs HB - zero-current comparator VISEN_Z Threshold voltage Negative-going edge - -35 - mV Positive-going edge - 35 - HB - overcurrent comparator and overload delays IISEN_HB Input bias current VISEN_HB = 0 to 1.4 V -1 - 1 nA VISEN_HB_x Frequency shift threshold (1)Voltage rising 0.76 0.80 0.84 V VISEN_HB_dis Immediate stop threshold (1)Voltage rising 1.42 1.5 1.58 V HB - soft-start function Ileak Open state current VCSS = 2 V - - 0.5 µA R Discharge resistance - - 120 220 TDISCH Css discharge duration VISEN_HB > VISEN_HBx -6 - µs VthHSP-SS SS discharge enable (HSP) (1)Voltage rising 1.77 1.85 1.94 V HB - standby function ISTBY Input bias current VSTBY = 1.3 V -1 - 1 µA VH VCFp change threshold (1)Voltage falling 1.26 1.3 1.34 V VH,Hys VH hysteresis Voltage rising 30 40 50 mV VL Disable threshold (1)Voltage falling 1.21 1.25 1.29 V VL,Hys VL hysteresis Voltage rising 30 45 60 mV Low-side gate driver (voltages referred to GND) VOL Output low voltage Isink = 50 mA - 0.5 0.9 V VOH Output high voltage Isource = 5 mA 14.7 14.9 - V tf Voltage fall time From 15 to 1.5 V - 30 70 ns tr Voltage rise time From 0 to 10 V - 60 110 ns UVLO saturation VVCC = 0 to VVCCon, Isink = 1 mA - 0.9 1.1 V High-side gate driver (voltages referred to OUT) VOL Output low voltage Isink = 50 mA - 0.5 0.9 V VOH Output high voltage VBOOT = VCC V, Isource = 5 mA 14.7 14.9 - V tf Voltage fall time From 15 to 1.5 V - 30 70 ns tr Voltage rise time From 0 to 10 V - 60 110 ns - HVG-OUT pull-down - 21 27 36 k 1. Parameters tracking each other. 2. DHVG + DLVG = 100%. Table 4. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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