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STPM098C 数据表(PDF) 35 Page - STMicroelectronics |
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STPM098C 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 110 page ![]() Figure 25. Power-up sequence - Slow VCC rise-up POR_DIG (internal signal) VREF1_UV_TH RESET PWMn VCC VCC_UV_TH INT_RST (PMBus flag) VRn_EN FULL ON V t VREF1 DRIVE No PMBus Read/Write Available No Telemetry and Diagnosis No Regulation POR_ANA (internal signal) SAFE-HIZ T_VRn_EN_flt VREF2 IDLE NVM READ & CRC T_nvm ≈ 7ms MBIST LBIST ABIST Max 15ms Max 35ms Max 1ms VSENn VSENn Soft Start T_dpor_htol_flt T_apor_htol_flt T_diag_rdy When control loop enable is asserted through VR_ENn pin, for a correct regulation startup a low to high transition on its input voltage (battery line) shall take place after power-up sequence is completed (that is, after ABIST completion). Direct connection of VR_ENn to VCC or VREFn shall be avoided. Loop enabling/disabling logic is based on VR_ENn voltage level and edge as follows: • VID reference is triggered according to the VR_ENn voltage edge: low to high on VR_ENn enables VID output as configured in VOUT_COMMAND, high to low transition disables VID output; • The loop controller is triggered according to VR_ENn voltage level: high level on VR_ENn enables loop controller (except VID), low level disables loop controller. As a consequence, applying a high logic level to VR_ENn without a clean low to high transition after power-up (ex. connecting VR_ENn to VREF1) will enable loop controller but not VID reference and will result in output loop trying to regulate the VID DAC offset. Table 23. Power-up timings Symbol Parameter Test condition Min Typ Max Unit Notes T_nvm NVM data deploy & CRC duration - - 7 ms Application information T_mbist MBIST procedure duration - - 35 ms Application information T_dbist DBIST procedure duration - - 15 ms Application information T_abist ABIST procedure duration - - 1 ms Application information T_diag_rdy Wait time for VRn_EN rising after PWUP sequence completion 2 - - ms Application information STPM098C Functional description DS14440 - Rev 1 page 35/110 |
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