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STLS2F02 数据表(PDF) 23 Page - STMicroelectronics |
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STLS2F02 数据表(HTML) 23 Page - STMicroelectronics |
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23 / 49 page ![]() STLS2F02 DDR2 SDRAM controller interface description 23/49 4.3 DDR2 SDRAM write protocol As shown in Figure 9 DDR2 SDRAM write protocol, the command (CMD) includes RAS_n, CAS_n and WE_n. When a write request happens, RAS_n=1, CAS_n=0,and WE_n=0. Unlike a read transaction, DQM is used to identify the write mask. In other words, the number of written bytes is needed. DQM is synchronous with DQS. Figure 9. DDR2 SDRAM write protocol CAS latency = 3, write latency = read latency = 2, burst length = 4 4.4 DDR2 SDRAM parameters Since different DDR2 SDRAMs may be used in a system, DDR2 SDRAM needs configuration after power-on reset. The JESD79-2B standard defines the configuration operations and procedure in detail. DDR2 is not available before the memory is initialized. In STLS2F02-based systems, after the system motherboard is initialized, the DDR2 SDRAM controller must configure the memory type before the memory is used. The configuration parameters are written into the 29 64-bit registers corresponding to the physical address 0x0000 0000 0FFF FE00. In one register, single, multiple or partial parameter data can be included. The configuration register and its parameters are shown in Table 12: DDR SDRAM configuration parameter register format Note: Unused bits are reserved. 4.4.1 Memory initialization sequence The memory initialization sequence is as follows: 1. System reset, aresetn signal is set to 0, all register content is set to its initial value 2. System reset release, aresetn signal is set to 1 3. Issue 64-bit write command to configuration register, all 29 registers are configured. If register CTRL_03 is written in this step, the parameter of start should be set 0. 4. Issue 64-bit write command to register CTRL_03. Set the parameter of start to 1. The memory controller then sends the initial instruction to memory automatically. CMD WRITE A NOP NOP NOP NOP NOP Precharge NOP Bank A Activate ≤ tDQS6 WL = RL - 1 = 2 DINA0 DINA1 DINA2 DINA3 T0 T1 T2 T3 T4 T5 T6 T7 Tn CK/CK DQS/DQS DQS ≥ WR ≥ tRP Completion of the Burst Write |
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