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H8/3028F 数据表(PDF) 183 Page - Renesas Technology Corp |
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H8/3028F 数据表(HTML) 183 Page - Renesas Technology Corp |
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183 / 923 page ![]() Rev. 2.00, 09/03, page 153 of 890 Table 6.7 DRAM Interface Pins Pin With DRAM Designated Name I/O Function PB4 UCAS Upper column address strobe Output Upper column address strobe for DRAM space access (when CSEL = 0 in DRCRB) PB5 LCAS Lower column address strobe Output Lower column address strobe for DRAM space access (when CSEL = 0 in DRCRB) HWR UCAS Upper column address strobe Output Upper column address strobe for DRAM space access (when CSEL = 1 in DRCRB) LWR LCAS Lower column address strobe Output Lower column address strobe for DRAM space access (when CSEL = 1 in DRCRB) CS2 RAS2 Row address strobe 2 Output Row address strobe for DRAM space access CS3 RAS3 Row address strobe 3 Output Row address strobe for DRAM space access CS4 RAS4 Row address strobe 4 Output Row address strobe for DRAM space access CS5 RAS5 Row address strobe 5 Output Row address strobe for DRAM space access RD WE Write enable Output Write enable for DRAM space write access* P80 RFSH Refresh Output Goes low in refresh cycle A12 to A0 A12 to A0 Address Output Row address/column address multiplexed output D15 to D0 D15 to D0 Data I/O Data input/output pins Note: * Fixed high in a read access. 6.5.6 Basic Timing Figure 6.18 shows the basic access timing for DRAM space. The basic DRAM access timing is four states: one precharge cycle (Tp) state, one row address output cycle (Tr) state, and two column address output cycle (Tc1, Tc2) states. Unlike the basic bus interface, the corresponding bits in ASTCR control only enabling or disabling of wait insertion between Tc1 and Tc2, and do not affect the number of access states. When the corresponding bit in ASTCR is cleared to 0, wait states cannot be inserted between Tc1 and Tc2 in the DRAM access cycle. If a DRAM read/write cycle is followed by an access cycle for an external area other than DRAM space when HWR and LWR are selected as the UCAS and LCAS output pins, an idle cycle (Ti) is inserted unconditionally immediately after the DRAM access cycle. See section 6.9, Idle Cycle, for details. |
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