LSM6DB0 datasheet(17/66 Pages) STMICROELECTRONICS

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LSM6DB0

Mechanical characteristics

3.3

Microprocessor electrical characteristics

Characteristics measured in Table 5 are for recommended operating conditions unless

otherwise specified. Typical values are in reference to TA = 25 C, VDD =1.8 V.

Table 5. DC and AC parameters

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VDD

Operating supply voltage

master serial port (DIO6 to

DIO10)

1.71

3.6

VDD1.8

Operating supply voltage

(DIO0 to DIO5)

1.75

1.8

1.95

Power consumption (Dhrystone without compiler options)

Isupply

Supply current

Reset

Active (CPU, Flash, and RAM)

From RAM

80 MHz (0.79 DMIPS/MHz)

40 MHz (0.79 DMIPS/MHz)

20 MHz (0.79 DMIPS/MHz)

16 MHz (0.79 DMIPS/MHz)

10 MHz (0.79 DMIPS/MHz)

10.3

5.95

3.85

3.48

2.9

From Flash

80 MHz (0.3 DMIPS/MHz)

40 MHz (0.43 DMIPS/MHz)

20 MHz (0.56 DMIPS/MHz)

16 MHz (0.79 DMIPS/MHz)

10 MHz (0.79 DMIPS/MHz)

7.5

5.5

4.74

4.34

3.7

Digital input and output (1.8 V supply)

CIN(1)

Port I/O capacitance

1.3

1.4

1.7

RPD(1)

Pull-down value

117

211

334

TRISE(1)

Rise time

0.1*VDD to 0.9*VDD, CL = 50 pF

10.3

TFALL(1)

Fall time

0.9*VDD to 0.1*VDD, CL = 50 pF

VIH(1)

Logic high-level input voltage

0.65 VDD

VIL(1)

Logic low-level input voltage

0.35 VDD

Digital input and output (3.3 V supply)

CIN(1)

Port I/O capacitance

1.3

1.4

1.7

RPD(1)

Pull-down value

144

RPU(1)

Pull-up value

122

TRISE(1)

Rise time

0.1*VDD to 0.9*VDD, CL = 50 pF

1.4

TFALL(1)

Fall time

0.9*VDD to 0.1*VDD, CL = 50 pF

1.5

12.5

LSM6DB0 数据表(PDF) 17 Page - STMicroelectronics

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