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PCF8833U/2DA 数据表(PDF) 92 Page - NXP Semiconductors |
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PCF8833U/2DA 数据表(HTML) 92 Page - NXP Semiconductors |
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92 / 112 page ![]() 2003 Feb 14 92 Philips Semiconductors Objective specification STN RGB - 132 × 132 × 3 driver PCF8833 15.9 Programming specification For programming OTP cells, the VOTP(gate) and VOTP(drain) voltages have to be applied as indicated in Fig.57. Voltages VOTP(gate) and VOTP(drain) can be applied at the same time or can have a staggered sequence as indicated by cases a and b of Fig.57. Depending on the series resistance in the supply wires, up to 16 OTP bits can be programmed at the same time. Each OTP cell can only be programmed once. Table 98 Programming specification (see Fig.57) Note 1. The voltage drop across the ITO track and any connector must be taken into account to guarantee a sufficiently high voltage at the chip pins. SYMBOL PARAMETER CONDITION MIN. TYP. MAX. UNIT VOTP(gate) voltage applied to VOTP(gate) pin relative to VSS1 programming active; note 1 tbf 8 tbf V programming inactive tbf 0 tbf V VOTP(drain) voltage applied to VOTP(drain) pin relative to VSS1 programming active; note 1 tbf 8 tbf V programming inactive tbf 0 tbf V IOTP(gate) current drawn by VOTP(gate) during programming tbf 100 tbf µA IOTP(drain) current drawn by VOTP(drain) during programming per programmed OTP cell tbf 500 tbf µA Tamb(prog) ambient temperature during programming 025 40 °C tOPESU set-up time of OPE as a function of VOTP(gate) and VOTP(drain) VOTP(gate) and VOTP(drain) > 0 V 1 −− ms tOPEHD hold time of OPE as a function of VOTP(gate) and VOTP(drain) VOTP(gate) and VOTP(drain) > 0 V 1 −− ms tWRITEPW pulse width of programming voltage 45 50 55 ms |
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