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ADP5053ACPZ-R7 数据表(PDF) 26 Page - Analog Devices

部件名 ADP5053ACPZ-R7
功能描述  Integrated Power Solution with Quad Buck
PDF  37 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADP5053ACPZ-R7 数据表(HTML) 26 Page - Analog Devices

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Data Sheet
ADP5053
Rev. B | Page 25 of 36
The equivalent series resistance (ESR) of the output capacitor
and its capacitance value determine the output voltage ripple.
Use the following equations to select a capacitor that can meet
the output ripple requirements:
RIPPLE
OUT
SW
L
RIPPLE
OUT
V
f
I
C
_
_
8
∆
×
×
∆
=
L
RIPPLE
OUT
ESR
I
V
R
∆
∆
=
_
where:
ΔIL is the inductor ripple current.
fSW is the switching frequency.
ΔVOUT_RIPPLE is the allowable output voltage ripple.
RESR is the equivalent series resistance of the output capacitor.
Select the largest output capacitance given by COUT_UV, COUT_OV,
and COUT_RIPPLE to meet both load transient and output ripple
requirements.
The voltage rating of the selected output capacitor must be
greater than the output voltage. Determine the minimum rms
current rating of the output capacitor by the following equation:
12
_
L
rms
C
I
I
OUT
∆
=
INPUT CAPACITOR SELECTION
The input decouplingcapacitor attenuates high frequencynoise on
the input and acts as an energyreservoir.Use a ceramic capacitor
and place it near the PVINx pin. Keep the loop composed of the
input capacitor, the high-side NFET, and the low-side NFET as
small as possible. The voltage rating of the input capacitor must
be greater than the maximum input voltage.Ensure that the rms
current rating of the input capacitor is larger than the following
equation:
(
)
D
D
I
I
OUT
rms
CIN
−
×
×
=
1
_
where D is the duty cycle (D = VOUT/VIN).
LOW-SIDEPOWER DEVICE SELECTION
Channel 1 and Channel 2 include integrated low-side MOSFET
drivers that drive low-side N-channel MOSFETs (NFETs). The
selection of the low-side N-channel MOSFET affects the
performance of the buck regulator.
The selected MOSFET must meet the following requirements:
•
Drain-to-source voltage (VDS) must be higher than 1.2 × VIN.
•
Drain current (ID) mustbe greater than1.2× ILIMIT_MAX,where
ILIMIT_MAX is the selected maximum current-limit threshold.
•
The selected MOSFET can be fully turned on at VGS = 4.5 V.
•
Total gate charge (Qg atVGS = 4.5V) must be less than20 nC.
Lower Qg characteristics provide higher efficiency.
When the high-side MOSFET is turned off,the low-side MOSFET
supplies the inductor current. For low duty cycle applications, the
low-side MOSFET supplies the current for most of the period.
To achieve higher efficiency, it is important to select a MOSFET
with low on resistance. The power conduction loss for the low-
side MOSFET can be calculated using the following equation:
PFET_LOW = IOUT2 × RDSON × (1 − D)
where:
RDSON is the on resistance of the low-side MOSFET.
D is the duty cycle (D = VOUT/VIN).
Table 12 lists recommended dual MOSFETs for various current-
limit settings. Ensure that the MOSFET can handle thermal
dissipation due to power loss.
Table 12. Recommended Dual MOSFETs
Vendor
Part No.
VDS (V)
ID (A)
RDSON
(mΩ)
Qg
(nC)
Size
(mm)
IR
IRFHM8363 30
10
20.4
6.7
3 × 3
IRLHS6276
20
3.4
45
3.1
2 × 2
Fairchild
FDMA1024 20
5.0
54
5.2
2 × 2
FDMB3900
25
7.0
33
11
3 × 2
FDMB3800
30
4.8
51
4
3 × 2
FDC6401
20
3.0
70
3.3
3 × 3
Vishay
Si7228DN
30
23
25
4.1
3 × 3
Si7232DN
20
25
16.4
12
3 × 3
Si7904BDN 20
6
30
9
3 × 3
Si5906DU
30
6
40
8
3 × 2
Si5908DC
20
5.9
40
5
3 × 2
SiA906EDJ
20
4.5
46
3.5
2 × 2
AOS
AON7804
30
22
26
7.5
3 × 3
AON7826
20
22
26
6
3 × 3
AO6800
30
3.4
70
4.7
3 × 3
AON2800
20
4.5
47
4.1
2 × 2
PROGRAMMING THEUVLO INPUT
Use the precision enable input to program the UVLO threshold
of the input voltage, as shown inFigure 33.To limitthe degradation
of the input voltage accuracydue to the internal 1 MΩ pull-down
resistor tolerance,ensure thatthe bottom resistorin the divider is
not too large; a value of less than 50 kΩ is recommended.
The precision turn-on threshold is 0.8 V. Calculate the resistive
voltage divider for the programmable VIN start-up voltage as
follows:
MΩ
1
+
MΩ
1
×
+
×
))
V/
(0.8
+
nA
(0.8
=
BOT_EN
BOT_EN
TOP_EN
BOT_EN
IN_STARTUP
R
R
R
R
V
where:
RTOP_EN is the resistor from VIN to EN.
RBOT_EN is the resistor from EN to ground.



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