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TNETX15AE 数据表(PDF) 66 Page - Texas Instruments |
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TNETX15AE 数据表(HTML) 66 Page - Texas Instruments |
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66 / 78 page  TNETX15AE ADDRESS-LOOKUP DEVICE SPWS041A – AUGUST 1997 – REVISED OCTOBER 1997 66 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 timing requirements (see Figure 19) external SRAM write cycle NO. MIN MAX UNIT 1 tc(W) Cycle time, write 40 ns operating characteristics over recommended operating conditions(see Figure 19) external SRAM write cycle NO. PARAMETER MIN MAX UNIT 2 td(EA)1 Delay time, from OSCIN ↑ to EA20–EA0 valid 2 17 ns 3 td(EWE)1 Delay time, from OSCIN ↓ to EWE↓ 12 ns 4 td(ED)1 Delay time, from OSCIN ↓ to ED15–ED0 valid 17 ns 5 td(EWE)2 Delay time, from OSCIN ↑ to EWE↑ 2 12 ns 6 td(ED)2 Delay time, from EWE ↑ to ED15–ED0 invalid 0 ns 7 td(EA)2 Delay time, from EWE ↑ to EA20–EA0 invalid 0 ns 8 td(ED)3 Delay time, from OSCIN ↑ to ED15–ED0 invalid 17 ns Z 4 1 5 Z 6 EA20–EA0 (Output) EWE (Output) EOE (Output) ED15–ED0 (Output) OSCIN (Input) Valid 2 2 Valid 3 7 Valid 8 Figure 19. External SRAM Write Cycle |
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