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EDBA164B4PR-1DATF-R 数据表(PDF) 39 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 39 Page - Micron Technology |
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39 / 152 page ![]() Table 32: MR8 Op-Code Bit Definitions (Continued) Feature Type OP Definition Density Read-only OP[5:2] 0000b: 64Mb 0001b: 128Mb 0010b: 256Mb 0011b: 512Mb 0100b: 1Gb 0101b: 2Gb 0110b: 4Gb 0111b: 8Gb 1000b: 16Gb 1001b: 32Gb All others: Reserved I/O width Read-only OP[7:6] 00b: x32 01b: x16 10b: x8 11b: not used Table 33: MR9 Test Mode (MA[7:0] = 09h) OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0 Vendor-specific test mode Table 34: MR10 Calibration (MA[7:0] = 0Ah) OP7 OP6 OP5 OP4 OP3 OP2 OP1 OP0 S4 Calibration code Table 35: MR10 Op-Code Bit Definitions Notes 1–6 apply to all parameters and conditions Feature Type OP Definition Calibration code Write-only OP[7:0] 0xFF: Calibration command after initialization 0xAB: Long calibration 0x56: Short calibration 0xC3: ZQRESET All others: Reserved Notes: 1. Host processor must not write MR10 with reserved values. 2. The device ignores calibration commands when a reserved value is written into MR10. 3. See AC timing table for the calibration latency. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Mode Register Definition 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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