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EDBA164B4PR-1DATF-R 数据表(PDF) 86 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 86 Page - Micron Technology |
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86 / 152 page ![]() Figure 56: Power-Down Entry and Exit Timing Exit PD Valid NOP NOP Enter PD NOP Enter power-down mode Input clock frequency can be changed or the input clock can be stopped during power-down. 1 Valid CK_t CKE CS_n CMD tCKE(MIN) tXP(MIN) tCKE(MIN) 2 tCK(MIN) tIHCKE tIHCKE Exit power-down mode Don’t Care tISCKE tISCKE CK_c Note: 1. Input clock frequency can be changed or the input clock stopped during power-down, provided that the clock frequency is between the minimum and maximum specified fre- quencies for the speed grade in use, and that prior to power-down exit, a minimum of two stable clocks complete. Figure 57: CKE Intensive Environment CK_c CKE tCKE tCKE tCKE tCKE CK_t Figure 58: REFRESH-to-REFRESH Timing in CKE Intensive Environments CK_c CKE CMD tCKE tCKE tCKE tCKE REFRESH REFRESH tXP tREFI tXP CK_t Note: 1. The pattern shown can repeat over an extended period of time. With this pattern, all AC and DC timing and voltage specifications with temperature and voltage drift are en- sured. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Power-Down 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 86 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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