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EDBA164B4PR-1DATF-R 数据表(PDF) 14 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 14 Page - Micron Technology |
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14 / 152 page ![]() Table 7: IDD Specifications – Dual Die, Dual Channel (Continued) VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V; TC = –40°C to +105°C Symbol Supply Speed Unit Parameter/Condition 1066 IDD3NS1 VDD1 2.8 mA All devices in active non power-down standby current with clock stop CK_t = LOW, CK_c = HIGH; CKE is HIGH; CS_n is HIGH; One bank is active; CA bus inputs are STABLE; Data bus inputs are STABLE IDD3NS2 VDD2, VDDQ 30 IDD4R1 VDD1 4 mA All devices in operating burst read tCK = tCK(avg) MIN; CS_n is HIGH between valid commands; One bank is active; BL = 4; RL = RL (MIN); CA bus inputs are SWITCHING; 50% data change occurs at each burst transfer IDD4R2 VDD2, VDDQ 840 IDD4W1 VDD1 4 mA All devices in operating burst write tCK = tCK(avg) MIN; CS_n is HIGH between valid commands; One bank is active; BL = 4; WL = WL (MIN); CA bus inputs are SWITCHING; 50% data change occurs at each burst transfer IDD4W2 VDD2, VDDQ 300 IDD51 VDD1 40 mA All devices in all bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tRFCab (MIN); Burst refresh; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD52 VDD2, VDDQ 240 IDD5AB1 VDD1 12 mA All devices in all bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tREFI; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD5AB2 VDD2, VDDQ 56 IDD5PB1 VDD1 12 mA All devices in per bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tREFIpb; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD5PB2 VDD2, VDDQ 56 Notes: 1. Published IDD values are the maximum of the distribution of the arithmetic mean. 2. IDD current specifications are tested after the device is properly initialized. 3. VDD2 and VDDQ are connected internally in the package. 4. The Quad die product IDD for each channel will be the sum of the IDD's for the state of operation for each rank (CS) in the channel. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM IDD Specifications 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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