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EDBA164B4PR-1DATF-R 数据表(PDF) 99 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 99 Page - Micron Technology |
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99 / 152 page ![]() Resetting MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the device is in the all banks idle state. Active MR reading: Starts with registration of the MRR command and ends when tMRR is met. After tMRR is met, the bank is in the active state. MR writing: Starts with registration of the MRW command and ends when tMRW is met. After tMRW is met, the device is in the all banks idle state. Precharging all: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. After tRP is met, the device is in the all banks idle state. 6. Bank-specific; requires that the bank is idle and no bursts are in progress. 7. Not bank-specific; requires that all banks are idle and no bursts are in progress. 8. Not bank-specific. 9. This command may or may not be bank specific. If all banks are being precharged, they must be in a valid state for precharging. 10. If a PRECHARGE command is issued to a bank in the idle state, tRP still applies. 11. A command other than NOP should not be issued to the same bank while a burst READ or burst WRITE with auto precharge is enabled. 12. The new READ or WRITE command could be auto precharge enabled or auto precharge disabled. 13. A WRITE command can be issued after the completion of the READ burst; otherwise, a BST must be issued to end the READ prior to asserting a WRITE command. 14. Not bank-specific. The BST command affects the most recent READ/WRITE burst started by the most recent READ/WRITE command, regardless of bank. 15. A READ command can be issued after completion of the WRITE burst; otherwise, a BST must be used to end the WRITE prior to asserting another READ command. Table 57: Current State Bank n to Command to Bank m Truth Table Notes 1–6 apply to all parameters and conditions Current State of Bank n Command to Bank m Operation Next State for Bank m Notes Any NOP Continue previous operation Current state of bank m Idle Any Any command supported to bank m –7 Row activating, active, or pre- charging ACTIVATE Select and activate row in bank m Active 8 READ Select column and start READ burst from bank m Reading 9 WRITE Select column and start WRITE burst to bank m Writing 9 PRECHARGE Deactivate row(s) in bank or banks Precharging 10 MRR READ value from mode register Idle MR reading or active MR reading 11, 12, 13 BST READ or WRITE burst terminates an on- going READ/WRITE from/to bank m Active 7 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Truth Tables 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 99 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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