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EDBA164B4PR-1DATF-R 数据表(PDF) 101 Page - Micron Technology

部件名 EDBA164B4PR-1DATF-R
功能描述  216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Features
PDF  152 Pages
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制造商  MICRON [Micron Technology]
网页  http://www.micron.com
标志 MICRON - Micron Technology

EDBA164B4PR-1DATF-R 数据表(HTML) 101 Page - Micron Technology

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5. A BST command cannot be issued to another bank; it applies only to the bank represen-
ted by the current state.
6. These states must not be interrupted by any executable command. NOP commands must
be applied during each clock cycle while in these states:
Idle MRR: Starts with registration of the MRR command and ends when tMRR has been
met. After tMRR is met, the device is in the all banks idle state.
Reset MRR: Starts with registration of the MRR command and ends when tMRR has been
met. After tMRR is met, the device is in the all banks idle state.
Active MRR: Starts with registration of the MRR command and ends when tMRR has
been met. After tMRR is met, the bank is in the active state.
MRW: Starts with registration of the MRW command and ends when tMRW has been
met. After tMRW is met, the device is in the all banks idle state.
7. BST is supported only if a READ or WRITE burst is ongoing.
8. tRRD must be met between the ACTIVATE command to bank n and any subsequent
ACTIVATE command to bank m.
9. READs or WRITEs listed in the command column include READs and WRITEs with or
without auto precharge enabled.
10. This command may or may not be bank-specific. If all banks are being precharged, they
must be in a valid state for precharging.
11. MRR is supported in the row-activating state.
12. MRR is supported in the precharging state.
13. The next state for bank m depends on the current state of bank m (idle, row-activating,
precharging, or active).
14. A WRITE command can be issued after the completion of the READ burst; otherwise a
BST must be issued to end the READ prior to asserting a WRITE command.
15. A READ command can be issued after the completion of the WRITE burst; otherwise, a
BST must be issued to end the WRITE prior to asserting another READ command.
16. A READ with auto precharge enabled or a WRITE with auto precharge enabled can be
followed by any valid command to other banks provided that the timing restrictions in
the PRECHARGE and Auto Precharge Clarification table are met.
17. Not bank-specific; requires that all banks are idle and no bursts are in progress.
18. RESET command is achieved through MODE REGISTER WRITE command.
Table 58: DM Truth Table
Functional Name
DM
DQ
Notes
Write enable
L
Valid
1
Write inhibit
H
X
1
Note:
1. Used to mask write data, and is provided simultaneously with the corresponding input
data.
216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM
Truth Tables
09005aef85eb530a
216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN
101
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.



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