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EDBA164B4PR-1DATF-R 数据表(PDF) 11 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 11 Page - Micron Technology |
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11 / 152 page ![]() Table 4: IDD Specifications – Dual Die, Dual Channel (Continued) VDD2, VDDQ = 1.14–1.30V; VDD1 = 1.70–1.95V; TC = –40°C to +85°C Symbol Supply Speed Unit Parameter/Condition 1066 IDD3N1 VDD1 2.4 mA All devices in active non power-down standby current tCK = tCK(avg) MIN; CKE is HIGH; CS_n is HIGH; One bank active; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD3N2 VDDQVDDQ 38 IDD3NS1 VDD1 2.4 mA All devices in active non power-down standby current with clock stop CK_t = LOW, CK_c = HIGH; CKE is HIGH; CS_n is HIGH; One bank is active; CA bus inputs are STABLE; Data bus inputs are STABLE IDD3NS2 VDDQVDDQ 24 IDD4R1 VDD1 4 mA All devices in operating burst read tCK = tCK(avg) MIN; CS_n is HIGH between valid commands; One bank is active; BL = 4; RL = RL (MIN); CA bus inputs are SWITCHING; 50% data change occurs at each burst transfer IDD4R2 VDDQVDDQ 840 IDD4W1 VDD1 4 mA All devices in operating burst write tCK = tCK(avg) MIN; CS_n is HIGH between valid commands; One bank is active; BL = 4; WL = WL (MIN); CA bus inputs are SWITCHING; 50% data change occurs at each burst transfer IDD4W2 VDDQVDDQ 300 IDD51 VDD1 40 mA All devices in all bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tRFCab (MIN); Burst refresh; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD52 VDDQVDDQ 240 IDD5AB1 VDD1 8 mA All devices in all bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tREFI; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD5AB2 VDDQVDDQ 40 IDD5PB1 VDD1 8 mA All devices in per bank auto-refresh tCK = tCK(avg) MIN; CKE is HIGH between valid commands; tRC = tREFIpb; CA bus inputs are SWITCHING; Data bus inputs are STABLE IDD5PB2 VDDQVDDQ 40 Notes: 1. Published IDD values are the maximum of the distribution of the arithmetic mean. 2. IDD current specifications are tested after the device is properly initialized. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM IDD Specifications 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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