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EDBA164B4PR-1DATF-R 数据表(PDF) 43 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 43 Page - Micron Technology |
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43 / 152 page  Figure 13: Command and Input Setup and Hold Command NOP Command T0 T1 T2 T3 CK_c CK_t CS_n CA rise CA[9:0] CMD Don’t Care Transitioning data CA fall CA rise CA fall CA rise CA fall CA rise CA fall NOP tIS tIH tIS tIH tIS tIH tIS tIH V IL(AC) V IH(DC) V IH(AC) V IL(DC) Note: 1. Setup and hold conditions also apply to the CKE pin. For timing diagrams related to the CKE pin, see the Power-Down section. Figure 14: CKE Input Setup and Hold T0 T1 Tx Tx + 1 CK_c CK_t CKE HIGH or LOW, but defined tIHCKE tISCKE tIHCKE tISCKE V IHCKE V IHCKE V ILCKE V ILCKE Notes: 1. After CKE is registered LOW, the CKE signal level is maintained below VILCKE for tCKE specification (LOW pulse width). 2. After CKE is registered HIGH, the CKE signal level is maintained below VIHCKE for tCKE specification (HIGH pulse width). ACTIVATE Command The ACTIVATE command is issued by holding CS_n LOW, CA0 LOW, and CA1 HIGH at the rising edge of the clock. The bank addresses BA[2:0] are used to select the desired bank. Row addresses are used to determine which row to activate in the selected bank. The ACTIVATE command must be applied before any READ or WRITE operation can be executed. The device can accept a READ or WRITE command at tRCD after the ACTI- VATE command is issued. After a bank has been activated, it must be precharged before another ACTIVATE command can be applied to the same bank. The bank active and precharge times are defined as tRAS and tRP, respectively. The minimum time interval between successive ACTIVATE commands to the same bank is determined by the RAS 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM ACTIVATE Command 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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