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EDBA164B4PR-1DATF-R 数据表(PDF) 26 Page - Micron Technology |
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EDBA164B4PR-1DATF-R 数据表(HTML) 26 Page - Micron Technology |
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26 / 152 page ![]() Figure 10: Functional Block Diagram CS_n CA[9:0] Input and Output buffer Latch circuit Data control circuit Column address buffer and burst counter Row address buffer and refresh counter Mode register DQ CK_t CK_c CKE DQS_t DQS_c DM Bank n Column decoder Memory cell array Bank 0 Sense amp. Note: 1. 512Mb is a 4-bank only. Simplified State Diagram The state diagram provides a simplified illustration of allowed state transitions and the related commands to control them. For a complete definition of the device behavior, the information provided by the state diagram should be integrated with the truth ta- bles and timing specification. The truth tables provide complementary information to the state diagram, they clarify the device behavior and the applied restrictions when considering the actual state of all the banks. 216-Ball and 220-Ball, Dual-Channel LPDDR2 SDRAM Simplified State Diagram 09005aef85eb530a 216b_220b_2ch_2e0e_embedded_lpddr2.pdf – Rev. F 08 /16 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2014 Micron Technology, Inc. All rights reserved. |
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