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SPC58ECX 数据表(PDF) 75 Page - STMicroelectronics

部件名 SPC58ECX
功能描述  SPC58 C Line - 32 bit Power Architecture automotive MCU Dual z4 cores 180 MHz, 4 MBytes Flash, HSM, ASIL-B
PDF  153 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SPC58ECX 数据表(HTML) 75 Page - STMicroelectronics

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DS11620 Rev 8
75/153
SPC584Cx, SPC58ECx
Electrical characteristics
76
ttr
Program rate(8)
2.2
C
2.8
3.40
C
2.4
C
s/M
B
tpr
Erase rate(8)
4.8
C
7.2
9.6
C
6.4
C
s/M
B
ttprfm
Program rate Factory Mode(8)
1.12
C
1.4
1.6
C
C
s/M
B
terfm
Erase rate Factory Mode(8)
4.0
C
5.2
5.8
C
C
s/M
B
tffprogram
Full flash programming time(9)
7.5
C
11.9
14.6
P
10.3
C
s
tfferase
Full flash erasing time(9)
18.6
C
28.7
33.0
P
25.2
C
s
tESRT
Erase suspend request
rate(10)
200
T
— µs
tPSRT
Program suspend request
rate(10)
30
T
— µs
tAMRT
Array Integrity Check - Margin
Read suspend request rate
15
T
— µs
tPSUS
Program suspend latency(11)
——
12
T
µs
tESUS
Erase suspend latency(11)
——
22
T
µs
tAIC0S
Array Integrity Check (4.0 MB,
sequential)(12)
25
T
— ms
tAIC256KS
Array Integrity Check (256
KB, sequential)(12)
1.5
T
— ms
tAIC0P
Array Integrity Check (4.0 MB,
proprietary)(12)
4.0
T
s
tMR0S
Margin Read (4.0 MB,
sequential)(12)
70
T
— ms
tMR256KS
Margin Read (256 KB,
sequential)(12)
4.0
T
— ms
1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.
2. Actual hardware operation times; this does not include software overhead.
3. Typical program and erase times assume nominal supply values and operation at 25 °C.
4. Typical End of Life program and erase times represent the median performance and assume nominal supply values.
Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but
not tested.
5. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified
number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.
6. Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5%) supply
voltages.
Table 41. Flash memory program and erase specifications (continued)
Symbol
Characteristics(1)(2)
Value
Unit
Typ(3) C
Initial max
Typical
end of
life(4)
Lifetime
max(5)
C
25 °C
(6)
All
temp
(7)
C
< 1 K
cycles
< 250 K
cycles



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