| 数据搜索系统,热门电子元器件搜索 |
|
SPC58ECX 数据表(PDF) 75 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
SPC58ECX 数据表(HTML) 75 Page - STMicroelectronics |
|
75 / 153 page ![]() DS11620 Rev 8 75/153 SPC584Cx, SPC58ECx Electrical characteristics 76 ttr Program rate(8) 2.2 C 2.8 3.40 C 2.4 — C s/M B tpr Erase rate(8) 4.8 C 7.2 9.6 C 6.4 — C s/M B ttprfm Program rate Factory Mode(8) 1.12 C 1.4 1.6 C — — C s/M B terfm Erase rate Factory Mode(8) 4.0 C 5.2 5.8 C — — C s/M B tffprogram Full flash programming time(9) 7.5 C 11.9 14.6 P 10.3 — — C s tfferase Full flash erasing time(9) 18.6 C 28.7 33.0 P 25.2 — — C s tESRT Erase suspend request rate(10) 200 T — — — — — — µs tPSRT Program suspend request rate(10) 30 T — — — — — — µs tAMRT Array Integrity Check - Margin Read suspend request rate 15 T — — — — — — µs tPSUS Program suspend latency(11) —— — — — — 12 T µs tESUS Erase suspend latency(11) —— — — — — 22 T µs tAIC0S Array Integrity Check (4.0 MB, sequential)(12) 25 T — — — — — — — ms tAIC256KS Array Integrity Check (256 KB, sequential)(12) 1.5 T — — — — — — — ms tAIC0P Array Integrity Check (4.0 MB, proprietary)(12) 4.0 T — — — — — — — s tMR0S Margin Read (4.0 MB, sequential)(12) 70 T — — — — — — — ms tMR256KS Margin Read (256 KB, sequential)(12) 4.0 T — — — — — — — ms 1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column. 2. Actual hardware operation times; this does not include software overhead. 3. Typical program and erase times assume nominal supply values and operation at 25 °C. 4. Typical End of Life program and erase times represent the median performance and assume nominal supply values. Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but not tested. 5. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified number of program/erase cycles. These maximum values are characterized but not tested or guaranteed. 6. Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5%) supply voltages. Table 41. Flash memory program and erase specifications (continued) Symbol Characteristics(1)(2) Value Unit Typ(3) C Initial max Typical end of life(4) Lifetime max(5) C 25 °C (6) All temp (7) C < 1 K cycles < 250 K cycles |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |