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数据搜索系统，热门电子元器件搜索 |
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SPC58ECX 数据表(PDF) 23 Page - STMicroelectronics |
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SPC58ECX 数据表(HTML) 23 Page - STMicroelectronics |
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23 / 153 page  DS11620 Rev 8 23/153 SPC584Cx, SPC58ECx Electrical characteristics 25 4.7 Device consumption Table 9. Device consumption Symbol C Parameter Conditions Value(1) Unit Min Typ Max IDD_LKG(2),(3) CC C Leakage current on the VDD_LV supply TJ =40 °C — — 14 mA DTJ =25 °C — — 10 DTJ =55 °C — — 20 DTJ =95 °C — — 50 DTJ = 120 °C — — 90 PTJ = 150 °C — — 180 IDD_LV(3) CC P Dynamic current on the VDD_LV supply, very high consumption profile(4) — — — 210 mA IDD_HV CC P Total current on the VDD_HV supply(4) fMAX —— 64 mA IDD_LV_GW CC T Dynamic current on the VDD_LV supply, gateway profile(5) — — — 170 mA IDD_HV_GW CC T Dynamic current on the VDD_HV supply, gateway profile(5) —— — 37 mA IDD_LV_BCM CC T Dynamic current on the VDD_LV supply, body profile(6) — — — 150 mA IDD_HV_BCM CC T Dynamic current on the VDD_HV supply, body profile(6) —— — 44 mA IDD_MAIN_CORE_AC CC T Main Core dynamic current(7) fMAX —— 50 mA IDD_HSM_AC CC T HSM platform dynamic operating current(8) fMAX/2 — — 20 mA IDDHALT(9) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply — — 71 100 mA IDDSTOP(10) CC T Dynamic current on the VDD_LV supply +Total current on the VDD_HV supply — — 15 30 mA |
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